1.7 The resistance of the semiconductor sample in Fig. P1.7 is measured between the two contacts as a function of wafer thickness t. The results are: t (μm) 200 R (2) 318.3 400 623.9 600 800 1000 929.5 1235.1 1540.7 ρ Fig. P1.7 Determine the resistivity p in §. cm and the specific contact resistance pc in 2. cm² 0.01 cm. Assume the current is confined to the area of the contact, shown by the shaded region. The contact is circular with the contact resistance given by Pc/A, where A is the contact area. for d = Re =

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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1.7 The resistance of the semiconductor sample in Fig. P1.7 is measured between the
two contacts as a function of wafer thickness t. The results are:
t (μm) 200
R (2) 318.3
400
623.9
600
800
1000
929.5
1235.1 1540.7
ρ
Fig. P1.7
Determine the resistivity p in §. cm and the specific contact resistance pc in 2. cm²
0.01 cm. Assume the current is confined to the area of the contact, shown
by the shaded region. The contact is circular with the contact resistance given by
Pc/A, where A is the contact area.
for d =
Re
=
Transcribed Image Text:1.7 The resistance of the semiconductor sample in Fig. P1.7 is measured between the two contacts as a function of wafer thickness t. The results are: t (μm) 200 R (2) 318.3 400 623.9 600 800 1000 929.5 1235.1 1540.7 ρ Fig. P1.7 Determine the resistivity p in §. cm and the specific contact resistance pc in 2. cm² 0.01 cm. Assume the current is confined to the area of the contact, shown by the shaded region. The contact is circular with the contact resistance given by Pc/A, where A is the contact area. for d = Re =
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