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- Question 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junctionPlease Help ASAP!!!! Just do A-CThe linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
- Please answer all subpart please ASAPCurrent measured in the circuit in the shape created using the ideal diode model .....is. Please select one: a. 0.87 mA b. 1.2 mA c. 0.80 mA d. 0.73 mAA designer will be using a silicon diode over a temperature range of 0 to 75 degree Celsius. What is the minimum and maximum values of barrier potential? (Assume 0.7V at room temperature is 25 degree Celsius).
- a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1Please find the correct answer by solving the problema) Use the diode’s characteristic equation,ID=Is exp(VD/VT), to determine the currentsourceIso that the output voltage is 1.5 V. b) If a load is attached to the output that draws 1 mA, what is the output voltage? c) If the circuit heats up to 40◦C, what is the output voltage without a load?
- A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Makes a diode Allows positive current flow from the p-type to the n-type materialConsider the circuit shown in the figure below with Ry=13 ko and R=9 kO. The Zener diode voltage is Vz = 3.5 V, then the currents Iz and , respectively, are equal to: R1 ww 20 V O a. 1.280 mA, 0.789 mA O b. 0.680 mA, 0.189 mA O c. 0.880 mA 0.389 mA O d. 1.080 mA, 0.589 mACalculate the new threshold voltage of a germanium diode when it operates at 100-degrees centigrade. Considering the room temperature is 25-degrees centigrade.