A Si sample is doped with 1017 As atoms/cm3. a. What is the equilibrium hole concentration p0 at 300 K? b. Where is EF relative to Ei? c. Sketch the resultant energy band diagram.
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- Question 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junctionPlease Help ASAP!!!! Just do A-CTake a diode formed by the junction of two type n and p semiconductors. In the figure below is the diagram of the energy bands of these semiconductors, (remember the concept of fermi energy, and knowing that for a pure semiconductor it is in the middle). Based on the figures below, answer a) What is the possible current direction in the direction from p to n or from n to p? b) Explain why the current flow occurs only in one direction.
- The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differPlease answer all subpart please ASAPCurrent measured in the circuit in the shape created using the ideal diode model .....is. Please select one: a. 0.87 mA b. 1.2 mA c. 0.80 mA d. 0.73 mA
- Q3. The maximum drift velocity of electrons carriers in n-type silicon is approximately 107 cm/s. What is the maximum drift current density that can be supported in the n-type silicon with a phosphorous doping of 10¹7/cm³? Assume n-1200cm²/V.s and Hp 400cm²/V.s3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.A designer will be using a silicon diode over a temperature range of 0 to 75 degree Celsius. What is the minimum and maximum values of barrier potential? (Assume 0.7V at room temperature is 25 degree Celsius).
- The current measured in the circuit formed by using the practical diode model is… ... Please choose one: a. 0.73 mA b. 1.2 mA c. 0.80 mA D. 0.87 mAa) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1Please find the correct answer by solving the problem