1. Consider a CMOS NAND gate, as shown in Fig. 6-3, p. 159, of the textbook. The two inputs A and B are connected together, and tied to an input voltage VIN. The transistors have Kn = Kp, VDD = 2.0 V, Vtn = 0.5 V, and Vtp = -0.5 V. There is a point on the voltage transfer curve, VTC, where the NMOS transistors are at the saturation/nonsaturation boundary, and the PMOS transistors are in saturation. This occurs at the boundary between bias regions III and IV in Fig. 5-4, p. 128, in the text. Calculate Vin and Vout at this bias point. Remember that two parallel transistors have twice the drive state of a single transistor, and two series transistors have half the drive state of a single transistor. 2. Calculate the power supply current, IDD, at the bias point in problem 1. Take Kn = Kp = 400 µA/V².
1. Consider a CMOS NAND gate, as shown in Fig. 6-3, p. 159, of the textbook. The two inputs A and B are connected together, and tied to an input voltage VIN. The transistors have Kn = Kp, VDD = 2.0 V, Vtn = 0.5 V, and Vtp = -0.5 V. There is a point on the voltage transfer curve, VTC, where the NMOS transistors are at the saturation/nonsaturation boundary, and the PMOS transistors are in saturation. This occurs at the boundary between bias regions III and IV in Fig. 5-4, p. 128, in the text. Calculate Vin and Vout at this bias point. Remember that two parallel transistors have twice the drive state of a single transistor, and two series transistors have half the drive state of a single transistor. 2. Calculate the power supply current, IDD, at the bias point in problem 1. Take Kn = Kp = 400 µA/V².
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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