For the MOSFET circuit given below, a) The depletion NMOS transistor has Ipss = 4mA and Vp = -4V. Given that Voo = +10V and Rp = 1kQ Find the region of operation for the MOSFET and calculate the parameters of VGs, Ip and Vos- b) Replace the short circuit that is connected between the gate and the drain with a 1M2 resistor. In addition, place another 1M2 resistor between the gate and the reference. Given that K = 0.25MA/V², V; =2V, RD = 5002 and Voo = +12V. Find the region of operation for the MOSFET and calculate the parameters of Vas, Ip and Vos- +VDD
For the MOSFET circuit given below, a) The depletion NMOS transistor has Ipss = 4mA and Vp = -4V. Given that Voo = +10V and Rp = 1kQ Find the region of operation for the MOSFET and calculate the parameters of VGs, Ip and Vos- b) Replace the short circuit that is connected between the gate and the drain with a 1M2 resistor. In addition, place another 1M2 resistor between the gate and the reference. Given that K = 0.25MA/V², V; =2V, RD = 5002 and Voo = +12V. Find the region of operation for the MOSFET and calculate the parameters of Vas, Ip and Vos- +VDD
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Transcribed Image Text:For the MOSFET circuit given below,
a) The depletion NMOS transistor has Ipss = 4mA and Vp = -4V. Given that Vop = +10V and Rp =
1k2 Find the region of operation for the MOSFET and calculate the parameters of VGs, Ip and Vos-
Replace the short circuit that is connected between the gate and the drain with a 1M2 resistor. In
addition, place another 1M2 resistor between the gate and the reference. Given that K = 0.25mA/V², V¿
b)
=2V, Rp = 5002 and VDD = +12V. Find the region of operation for the MOSFET and calculate the
parameters of VGs, Ip and Vos-
+VDD
RD
+
Vos
+
Vas
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