1) how did the soution for the collector current become VCC/(Re+Rc)? please explain 2.)instead of using the boxed solution, would it be alright to use KVL instead to solve for the collector current? If yes, please show the equation for the KVL.

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1) how did the soution for the collector current become VCC/(Re+Rc)? please explain

2.)instead of using the boxed solution, would it be alright to use KVL instead to solve for the collector current? If yes, please show the equation for the KVL.

R₂
0
R₁
O
+ Vcc
Rc
IEC
RE
3.26 In the circuit of Fig. 3-8(a), RE = 300 S2, Rc = 500 2, Vcc = 15 V, B = 100, and the Si transistor
has ß-independent bias. Size R₁ and R₂ for maximum symmetrical swing if VCEsat ~ 0.
For maximum symmetrical swing, the quiescent collector current is
Ico
1 Vcc
2 RE+RC
15
2(300+500)
-= 9.375 mA
Standard practice is to use a factor of 10 as the margin of inequality for ß independence in (3.8). Then,
RB
BRE
10
and, from (3.7),
and
(100)(300)
10
V BBV BEQ+Ico(1.1 RE) = 0.7+(9.375 x 10-3)(330) = 3.794 V
Equations (3.5) may now be solved simultaneously to obtain
R₁
3 x 10³
1-3.794/15
15
3.794
R₂ = RB
RB
1- V BB/VCC
Vcc
VBB
-= 3kg
= 3 × 10³
: 4.02 ΚΩ
· 11.86 ΚΩ
Transcribed Image Text:R₂ 0 R₁ O + Vcc Rc IEC RE 3.26 In the circuit of Fig. 3-8(a), RE = 300 S2, Rc = 500 2, Vcc = 15 V, B = 100, and the Si transistor has ß-independent bias. Size R₁ and R₂ for maximum symmetrical swing if VCEsat ~ 0. For maximum symmetrical swing, the quiescent collector current is Ico 1 Vcc 2 RE+RC 15 2(300+500) -= 9.375 mA Standard practice is to use a factor of 10 as the margin of inequality for ß independence in (3.8). Then, RB BRE 10 and, from (3.7), and (100)(300) 10 V BBV BEQ+Ico(1.1 RE) = 0.7+(9.375 x 10-3)(330) = 3.794 V Equations (3.5) may now be solved simultaneously to obtain R₁ 3 x 10³ 1-3.794/15 15 3.794 R₂ = RB RB 1- V BB/VCC Vcc VBB -= 3kg = 3 × 10³ : 4.02 ΚΩ · 11.86 ΚΩ
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