E1 Experiment 3

These questions from electronics lab course. I need the final answer,please.

Diagram showing zero basing in field effect transistors as applied in electronics

What is Basic Circuit element

5. The transistor is a semiconductor device. A. Two - layer B. one- layer C. four - layer D. three- layer E. npn 6. The basic amplifying action was produced by transferring a current I from a ---- resistance circuit. A. Low to a high B. high to low C. low to low D. high to high E. big to small

1) An FET transistor has the following characteristic(s) a. It is a voltage controlled, voltage device b. It only comes in green packages c. It is a current controlled, voltage device d. It is a voltage controlled, current device

-Fill in the blank(s) with appropriate word(s): 1. The three –phase half - wave converter is not normally used in practical systems, because ___________________.2. The three –phase half - wave converter is provide _______________average output voltage.3. The frequency of output ripple voltage for three –phase half - wave converter is_____________.

16)This Multiple choice questions from electronics lab course &just write for me final answer ,It easy for you.

Explain the characteristics of LDR? What is the use of Multimeter in the experiment?

In what ways are integrated circuits distinct from transistors?

Introduction:  For ohmmeter testing purpose, an NPN transistor is similar to two diodes back to back, as shown in figure 12b. there exists two PN junctions, base-emitter and base collector. When each of these junctions is forward biased, the positive lead of the ohmmeter must be connected to P material, and the negative lead to the negative N material (Figure 12c). there should be low resistance reading when these junctions are reverse biased, positive lead to N material and negative lead to P material (figure 12d).   The PNP transistor can be tested with a similar method, except that the diodes are face to face as shown in figure 12e. this simple test determines if the transistor is shorted or open on a go (no problems)/no go (it has problems) basis.

Figure shows a composite switch consisting of a power transistor (BJT) in series with a diode. Assuming that the transistor switch and the diode are ideal, the I-V characteristic of the composite switch is

i need the naswer of 3 and 4 and 5 please and thank you so much

choose the correct answer.  1. Transistor can be used as a switch a) True b)False   2. Diode can be used as a switch a) True b) False   3. Transistor conducts maximum output voltage during operation in a) Active region b) Saturation region c) Cutoff region d) None   4. Transistor conducts maximum output current during operation in a) Active region b) Saturation region c) Cutoff region d) None   5. Zener diode can not work in forward biased region a) True b) False   6. Transistor can not be used as a switch a) True b) False   7. BJT is a a) Current controlled device b) Voltage controlled device c) Beta controlled device d) Temperature controlled device   8. Diode is a a) Unidirectional device b) Bidirectional device c) both of the above d) None…

Setup the Half Wave Rectifier using LiveWire Simulation software for the given below values.f=1HZVs=5V

TransistorsFill in the blanks with the words below:amplify, bipolar transistor, current, device, embedded, field, field-effect transistor, fundamental,implemented, milestones, standardized, terminals, ubiquitous, vacuum tube, voltageA transistor is a semiconductor 1……….. used to amplify or switch electronic signals and electrical power. It iscomposed of semiconductor material usually with at least three 2 …………. for connection to an external circuit. A3. ………… or current applied to one pair of the transistor's terminals controls the current through another pair ofterminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can4 …………… a signal. Today, some transistors are packaged individually, but many more are found 5 …………. inintegrated circuits.The transistor is the 6 …………. building block of modern electronic devices, and is 7. …………in modern electronicsystems. Julius Edgar Lilienfeld patented a 8 …………….. in 1926 but it was not…

Can you state the characteristics of a Bipolar Junction Transistor?

B1. For the CRO square voltage waveform is shown in Figure. The 'time/cm' switch is on 40 ms/cm and the 'volts/cm' switch is on 1 V/cm. Calculate (a) the frequency, (b) the magnitude of voltage, (c) the peak voltage, The frequency The magnitude of voltage The peak voltage

How many identical collectors would we need to get overall efficiency of 95% if each collector has efficiency of 90%?

I need the answer as soon as possible

A 10 V Zener diode is used to regulate the voltage across a variable loadresistor. The input voltage Vs varies between 13 and16 V. The loadcurrent (??) varies between 10 and 85 mA. The minimum Zener current is15 mA. Findi. The maximum value of Rsii. The maximum power dissipated by the Zener diode, using the value ofRs.

Explain the KCL with proper circuit diagram.

Electronics for electricians explain the relationship between Base-emitter current and Collect-emitter current.

please solve it in 10 minutes

Question 8 Calculate the expression of the peak-to-peak voltage ripple of the step-up converter in the case of the discontinuous conduction mode using the circuit parameters.

Npn with a β value of 100 in the circuit in the figurefor zener diodes used to drive the transistorGiven as VZ1=16.7 V and VZ2=5.6 V. Inanalysis of transistor operating point Circuitidentify by.(VBE=0.7 V )

Explain the two types of MOSFETs (draw the physical structure as well). Also explain themajor difference between them regarding mode of operation?

. Give the short answer offollowing questions each question carries equal marks Don’t need tobriefly  explain Its better to give point to point answer . (a)   How zenerdiode is a special diode          (b)   Explain the difference between zener and avalanche effect          (c)   Explain break down voltage          (d)   Draw the symbol of PN junction diode, tunnel diode , Zener                 Diode.          (e)   How collector size is more than emitter          (f)   How NPN transistor is more good as compare to pnp           (g)   Why collector have more size than emitter