A chip that is of length L = 5 mm on a side and thickness t = 1 mm is encased in a ceramic substrate, and its exposed surface is convectively cooled by a dielectric liquid for which h = 150 W/m 2 ⋅ K and T ∞ = 20 ° C . In the off-mode the chip is in thermal equilibrium with the coolant ( T i = T ∞ ) . When the chip is energized. however, its temperature increases until a new steady state is established. For purposes of analysis, the energized chip is characterized by uniform volumetric heating with q . = 9 × 10 6 W/m 3 . Assuming an infinite contact resistance between the chip and substrate and negligible conduction resistance within the chip, determine the steady-state chip temperature T f . Following activation of the chip, how long does it take to come within 1 ° C of this temperature? The chip density and specific heat are ρ = 2000 kg/m 3 and c = 700 J/kg ⋅ K, respectively.
A chip that is of length L = 5 mm on a side and thickness t = 1 mm is encased in a ceramic substrate, and its exposed surface is convectively cooled by a dielectric liquid for which h = 150 W/m 2 ⋅ K and T ∞ = 20 ° C . In the off-mode the chip is in thermal equilibrium with the coolant ( T i = T ∞ ) . When the chip is energized. however, its temperature increases until a new steady state is established. For purposes of analysis, the energized chip is characterized by uniform volumetric heating with q . = 9 × 10 6 W/m 3 . Assuming an infinite contact resistance between the chip and substrate and negligible conduction resistance within the chip, determine the steady-state chip temperature T f . Following activation of the chip, how long does it take to come within 1 ° C of this temperature? The chip density and specific heat are ρ = 2000 kg/m 3 and c = 700 J/kg ⋅ K, respectively.
Solution Summary: The author explains that steady state temperature is T_f=80°C.
A chip that is of length
L
=
5
mm
on a side and thickness
t
=
1
mm
is encased in a ceramic substrate, and its exposed surface is convectively cooled by a dielectric liquid for which
h
=
150
W/m
2
⋅
K
and
T
∞
=
20
°
C
.
In the off-mode the chip is in thermal equilibrium with the coolant
(
T
i
=
T
∞
)
.
When the chip is energized. however, its temperature increases until a new steady state is established. For purposes of analysis, the energized chip is characterized by uniform volumetric heating with
q
.
=
9
×
10
6
W/m
3
.
Assuming an infinite contact resistance between the chip and substrate and negligible conduction resistance within the chip, determine the steady-state chip temperature
T
f
.
Following activation of the chip, how long does it take to come within
1
°
C
of this temperature? The chip density and specific heat are
ρ
=
2000
kg/m
3
and
c
=
700
J/kg
⋅
K,
respectively.
101
the three shafts if the diameter ratio is 2 (D/d = 2)? Ans.
na, tension = 1.21, na, bending = 1.19, na, torsion = 1.17.
6.32 A material with a yield strength of S₁ = 350 MPa is
subjected to the stress state shown in Sketch c. What is
the factor of safety based on the maximum shear stress
and distortion energy theories? Ans. For MSST, n, =
11.67.
50 MPa
85 MPa
20 MPa
70 MPa
Sketch c, for Problems 6.32 and 6.33
Can you draw the left view of the first orthographic projection
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