Mastering Physics with Pearson eText -- Standalone Access Card -- for University Physics with Modern Physics (14th Edition)
14th Edition
ISBN: 9780133978216
Author: Hugh D. Young, Roger A. Freedman
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 42, Problem 42.13DQ
To determine
The reason why the speeds of molecules in a gas vary with temperature whereas speeds of electrons in the
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Is it feasible to describe the distinction between a conductor and an insulator using a semiconductor as an example? Why not use a graph to explain the arguments you're making?
X- Hall Effect demonstrates that it is the electrons that are free to move. Y-
Germanium and Selenium are materials that are intermediate between insulators
and conductors.
O X is true and Y is false
O X is false and Y is true
O X and Y are both true
O X and Y are both false
The mean speed of conduction electron in Cu is electrons1.5 × 106 ms-1 and the frequency of vibration of the copper atoms at room temperature is about 4 × 1012 s-1. Estimate the drift mobility of electrons and the conductivity of Cu. The density of Cu is 8.96 g cm-3 and the atomic mass is 63.56 g mol-1.
Chapter 42 Solutions
Mastering Physics with Pearson eText -- Standalone Access Card -- for University Physics with Modern Physics (14th Edition)
Ch. 42.1 - If electrons obeyed the exclusion principle but...Ch. 42.2 - Prob. 42.2TYUCh. 42.3 - Prob. 42.3TYUCh. 42.4 - One type of thermometer works by measuring the...Ch. 42.5 - Prob. 42.5TYUCh. 42.6 - Prob. 42.6TYUCh. 42.7 - Suppose a negative charge is placed on the gate of...Ch. 42 - Van der Waals bonds occur in many molecules, but...Ch. 42 - Prob. 42.2DQCh. 42 - The H2+ molecule consists of two hydrogen nuclei...
Ch. 42 - The moment of inertia for an axis through the...Ch. 42 - Prob. 42.5DQCh. 42 - Prob. 42.6DQCh. 42 - Prob. 42.7DQCh. 42 - The air you are breathing contains primarily...Ch. 42 - Prob. 42.9DQCh. 42 - Prob. 42.10DQCh. 42 - What factors determine whether a material is a...Ch. 42 - Prob. 42.12DQCh. 42 - Prob. 42.13DQCh. 42 - Prob. 42.14DQCh. 42 - Prob. 42.15DQCh. 42 - Prob. 42.16DQCh. 42 - Prob. 42.17DQCh. 42 - Prob. 42.18DQCh. 42 - Prob. 42.19DQCh. 42 - Prob. 42.20DQCh. 42 - Prob. 42.21DQCh. 42 - Prob. 42.22DQCh. 42 - Prob. 42.23DQCh. 42 - Prob. 42.24DQCh. 42 - If the energy of the H2 covalent bond is 4.48 eV,...Ch. 42 - An Ionic Bond, (a) Calculate the electric...Ch. 42 - Prob. 42.3ECh. 42 - Prob. 42.4ECh. 42 - Prob. 42.5ECh. 42 - Prob. 42.6ECh. 42 - Prob. 42.7ECh. 42 - Two atoms of cesium (Cs) can form a Cs2 molecule....Ch. 42 - Prob. 42.9ECh. 42 - Prob. 42.10ECh. 42 - A lithium atom has mass 1.17 1026 kg, and a...Ch. 42 - Prob. 42.12ECh. 42 - When a hypothetical diatomic molecule having atoms...Ch. 42 - The vibrational and rotational energies of the CO...Ch. 42 - Prob. 42.15ECh. 42 - Prob. 42.16ECh. 42 - Prob. 42.17ECh. 42 - Prob. 42.18ECh. 42 - Prob. 42.19ECh. 42 - Prob. 42.20ECh. 42 - Prob. 42.21ECh. 42 - Prob. 42.22ECh. 42 - Prob. 42.23ECh. 42 - Prob. 42.24ECh. 42 - Prob. 42.25ECh. 42 - Prob. 42.26ECh. 42 - Prob. 42.27ECh. 42 - Prob. 42.28ECh. 42 - Prob. 42.29ECh. 42 - Prob. 42.30ECh. 42 - Prob. 42.31ECh. 42 - Prob. 42.32ECh. 42 - Prob. 42.33PCh. 42 - Prob. 42.34PCh. 42 - Prob. 42.35PCh. 42 - The binding energy of a potassium chloride...Ch. 42 - (a) For the sodium chloride molecule (NaCl)...Ch. 42 - Prob. 42.38PCh. 42 - Prob. 42.39PCh. 42 - Prob. 42.40PCh. 42 - Prob. 42.41PCh. 42 - Prob. 42.42PCh. 42 - Prob. 42.43PCh. 42 - Prob. 42.44PCh. 42 - Prob. 42.45PCh. 42 - Prob. 42.46PCh. 42 - Prob. 42.47PCh. 42 - Prob. 42.48PCh. 42 - Prob. 42.49PCh. 42 - Prob. 42.50PCh. 42 - Prob. 42.51PCh. 42 - Prob. 42.52PCh. 42 - Prob. 42.53CPCh. 42 - Prob. 42.54CPCh. 42 - Prob. 42.55CPCh. 42 - Prob. 42.56PPCh. 42 - Prob. 42.57PPCh. 42 - Prob. 42.58PP
Knowledge Booster
Similar questions
- Silicon crystal has a saturated drift velocity, which limits the applications in power devices. Besides, the drift velocity of GaAs crystal decreases with the increase in the applied electric field. In other words, GaAs materials are not suitable for the applications of power devices. Can you explain the reason?arrow_forwardAssuming that there are 1.5 free electrons per gold atom. The electrical conductivity and density for Au are 4.3 x 10' (0-m)* and 19.32 g/cm?, respectively. (a) Calculate the number of free electrons per cubic meter for gold (b) Compute the electron mobility for gold.arrow_forwardQuestion-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.arrow_forward
- The gap between valence and conduction bands in diamond is 5.47 eV.What is the maximum wavelength of a photon that can excite an electron from the top of the valence band into the conduction band? In what region of the electromagnetic spectrum does this photon lie?arrow_forwardThe conductivity of copper is = 0.6 × 10³ (m)-¹. In the classical model of conduction which of the following statements is wrong for the drift velocity dis proportional to the charge carrying particles V has the opposite direction to Ehaving the negatively charged carriers Vd is proportional to the time between collisions of the electrons and the ions of the crystal lattice V dis proportional to the mass of the charge carriersarrow_forwardAssuming that there are 1.5 free electrons per gold atom. The electrical conductivity and density for Au are 4.3 x 10' (N-m)1 and 19.32 g/cm3, respectively. (a) Calculate the number of free electrons per cubic meter for gold (b) Compute the electron mobility for gold.arrow_forward
- In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forwardSince the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.arrow_forwardIs it feasible to describe the distinction between a conductor and an insulator using a semiconductor as an example? Why not use a graph to explain your points?arrow_forward
- An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forwardDistinguish between the drift speed and fermi speed of the conduction electrons in a metal?arrow_forwardi need the answer quicklyarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Physics for Scientists and Engineers: Foundations...PhysicsISBN:9781133939146Author:Katz, Debora M.Publisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
Physics for Scientists and Engineers: Foundations...
Physics
ISBN:9781133939146
Author:Katz, Debora M.
Publisher:Cengage Learning