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(a)
Interpretation:
Atom numbers per unit cell should be calculated.
Concept Introduction:
The atomic symbol of gallium is Ga and has the atomic number of 31. The Gallium is at solid state at the room temperaturebut when the compound gets heated it melts and attains the liquid state. In the periodic table it belongs to group 13 and some of its properties are similar to the indium, thallium, and aluminum. The element Gallium do not occur in nature and it is not a free element.
(b)
Interpretation:
Unit cell packing factor should be calculated.
Concept Introduction:
The atomic symbol of gallium is Ga and has the atomic number of 31. The Gallium is at solid state at the room temperature but when the compound gets heated it melts and attains the liquid state. In the periodic table it belongs to group 13 and some of its properties are similar to the indium, thallium, and aluminum. The element Gallium do not occur in nature and it is not a free element.
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Chapter 3 Solutions
Essentials of Materials Science and Engineering, SI Edition
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- In the past, encryption and decryption were mostly done by substitution and permutation of letters in a text message. study those classic cryptographic schemes Then, develop an automatic cipher using Javascript The cipher should be able to perform the following tasks: generate keys encrypt a given plaintext message with a key selected from the list of keys generated decrypt a given ciphertext message with a known cipher keyarrow_forward1. Zinc is an important trace nutrient for photosynthetic organisms (e.g., phytoplankton) in sea water. Calculate the speciation of zinc (Zn(II)) in seawater assuming Zn(II) TOT = 5 x 10-8 M. Provide a list of the metal-ligand complexes and their corresponding stability Constants that you will include in your calculation. If you decide to exclude any of the complexes for which stability constants are provided in Table 9.4, please list these separately and explain your rationale. b. Compute the concentrations of the metal-ligand complexes identified in part a. c. Compute the activities of the metal-ligand complexes using the concentrations calculated in part b and using the data in Table 9.6B to calculate the activity coefficients. (Note—you likely already have a spreadsheet where you calculated activity coefficients from week 3!)arrow_forwardSteam flows steadily through a turbine at a rate of 45,000 lbm/h, entering at 1000 psia and 900°F and leaving at 5 psia as saturated vapor. If the power generated by the turbine is 4.1 MW, determine the rate of heat loss from the steam. The enthalpies are h1 = 1448.6 Btu/lbm and h2 = 1130.7 Btu/lbm. The rate of heat loss from the steam is Btu/s.arrow_forward
- a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 Karrow_forwardThe A/D converter wit the specifications listed below is planned to be used in an environment in which the A/D converter temperature may change by ± 10 °C. Estimate the contributions of conversion and quantization errors to the uncertainty in the digital representation of an analog voltage by the converter. FSO N Linearity error Temperature drift error Analog to Digital (A/D) Converter 0-10 V 12 bits ± 3 bits 1 bit/5 °Carrow_forward6-13. A smooth tube in the form of a circle of radius r rotates in its vertical plane with a constant angular velocity w. The position of a particle of mass m that slides inside the tube is given by the relative coordinate p. Find the differential equation for . e О E g ω Figure P6-13arrow_forward
- 4. Two different silicon samples maintained at 300K are characterized by the energy band diagrams. Answer the questions that follow after choosing a specific diagram for analysis. a) Do equilibrium conditions prebail? How do you know? b) Sketch the electrostatic potential (V) inside the semiconductor as a function of x. c) Sketch the electric field (ε) inside the semiconductor as a function of x. EF Ec E₁ Ev E₁ EF Ev X X 0 L/2 L 0 L/2 L 3.arrow_forwardProblem 2 Consider the power drawn by a resistance load in a DC circuit. The power is calculated as P = VI or P = 1²R. It is given that the normalized uncertainty or % percentage uncertainty in measurements of I, R, and V are the same. Find the uncertainty in P using the two different expressions for power. Is the uncertainty using the two methods the same? If not, WHY, explain?arrow_forwardStudy the Capital One Breach article via the following link: https://www.darkreading.com/cloud-security/capital-one-breach-conviction-exposes-scale-of-cloud-entitlement-riskDiscuss (a) the breach, (b) what and who was affected, and (c) provide at least three outcomes, using references from the article, what you learned on cloud network architecture critical to your personal information.arrow_forward
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