Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
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Chapter 14, Problem 101P
To determine
The vibration frequency of the molecule.
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The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes.
Chapter 14 Solutions
Physics for Scientists and Engineers
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- The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that nI = 1.5 × 1016m–3. Is the material n-type or p-type?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardAn atom’s nucleus is a collection of fermions— protons and neutrons. (a) In calculating the Fermi energy in a nucleus, the protons and neutrons must be considered separately. Why? (b) Find the Fermi energy of (i) the protons and (ii) the neutrons in a uranium nucleus, which has a radius of 7.4 x 10-15 m and contains 92 protons and 146 neutrons.arrow_forward
- The intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.arrow_forwardSilicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forwardFindarrow_forward
- b)Super conductor aluminum has critical temperature of 7.26K at zero magnetic fields and a critical field of 5×10^5 A/m at zero Kelvin. Find the critical magnetic field at 3K……arrow_forwardQ#04. (a) Calculate the number of atoms per unit area in (100), (110) and (111) planes of in bcc crystal with the lattice parameter of 2.5 angstrom.arrow_forwardQuestion A5 a) Calculate the average number of phonons occupying a vibrational mode with angular fre- quency w = 4.0 × 10 12 s−1 at T = 300 K. b) Calculate the total energy of the mode at this temperature, expressing your answer in meV.arrow_forward
- At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43 and 0.21 m2/V s, respectively. If the electron and hole concentrations are both 2.3 x 10'® m, find the conductivity at this temperature.arrow_forwardAn optical fiber for telecommunication is made of SiO2 glass (density = 2.20 Mg/m'). How many Si atoms and how many O atoms are present per millimeter of length (L=1 mm) of a fiber 10 um in diameter (d-10 mm)? Given: M(Si)–28.09 g/mole M(O)-16 g/mole Avogadro's Number: AN = 0.6203 (10) Solution:arrow_forwardPls help ASAP. Pls show all work annd circle the final answer.arrow_forward
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