DELMAR'S STANDARD TEXT OF ELECTRICITY
6th Edition
ISBN: 9780357323380
Author: Herman
Publisher: CENGAGE C
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Chapter 12, Problem 14RQ
What determines the density of the molecules in a gas environment?
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Chapter 12 Solutions
DELMAR'S STANDARD TEXT OF ELECTRICITY
Ch. 12 - 1. Conduction in a liquid depends on the movement...Ch. 12 - What is a negative ion?Ch. 12 - 3. What is a positive ion?
Ch. 12 - Name three basic substances that can be used to...Ch. 12 - What is an electrolyte?Ch. 12 - 6. What is used to hold a sulfate ion together?
Ch. 12 - What is the negative terminal of a power source...Ch. 12 - Prob. 8RQCh. 12 - What determines the thickness of the coating...Ch. 12 - What is electrolysis?
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- Charge neutrality Since doped semiconductor remains electroneutral, the concentration of negative charges equals the concentration of positive charges. n+ Na,ionized p+Nd,ionized np = n; 2 2 N-Na N N d d р + 2 2 n = Nd-Na 2 + Na - 2 Na +n₁ 2 71/2 1/2 2 2 +n Concentration of electrons and holes 1. Calculate concentrations of electrons and holes at room temperature in Si and Ge with donor concentration of 1.5x10¹7 cm³ and acceptor concentration of 8x1016 cm-3. 2. Will these concentrations change much with the temperature increase to 100°C?arrow_forwardAnswer the questions on the end of the image pleasearrow_forwardAnswer these two questions on the end of the image, please 1.Calculate intrinsic carrier concentration for Si, Ge and GaAs at temperatures -20°C, 20°C (room temperature) and 120°C 2.Compare the obtained data with n and p shown on previous slide 25arrow_forward
- Can you help me achieve the requirements using Arduino? I have encountered some issues with these requirements. Q.2: Suppose you have two push buttons connected to ports (0 & 1) and four LED's connected to ports (6-9). Write a program to flash ON the odd LED's if we press the switch 0 for 4s, flash ON the even LED's if we press the switch 1 for 5s and flash ON all the LED's otherwise for 6s.arrow_forwardCharge carrier concentration in doped semiconductor: compensation n = Na - Na Na - Na >> ni n-type p = n₁²/n 2 if N₂ >> N₁, n = N₁_ and _p=n² / Na d p = Na-Nd p-type Na-Na >> n₁ d 2 n = n₁₂²/p 2 if N₁ >> N₁, p = N₁ and n = n² / Na a n-type Dopant compensation: Examples d n = Na-N₁ = 4×10¹ cm¯ -3 ++++++ n = 4×1016 cm-³ N=6×1016 cm-3 p=n/n=1020/4×1016 = 2.5×10³ cm p-type -3 p=Na-N₁ =8×10 −6×1016 = 2×10¹6 cm³ n=n²/p=1020/2×101 =5×10³ cm³ N2×1016 cm³ ++++++ N=6x1016 cm-3 N = 8×1016 cm-3 p=2×1016 cm³ The resulting charge carrier concentration in compensated semiconductor approximately equals the difference between the donor and acceptor concentrations. Charge carrier concentration in n-type and p-type semiconductors 1. Calculate concentrations of electrons and holes at room temperature in Si containing 2x1017 cm³ of donors and 8x1016 -3 cm³ of acceptors. Assume that Na, Nd >> n;. αν 2. Calculate concentrations of electrons and holes at room temperature in Ge containing 2x10¹7 cm³ of…arrow_forwardlonization energy of dopants in semiconductors lonization energy of shallow donors and acceptors can be evaluated using hydrogenic model: lonization energy E Hion and orbital radius a, of hydrogen atom Hydrogen Atom moe4 EHion = 13.6 eV a = 8ε²h² Απερη mee² = 5.2918 x 10-11 m lonization energy Eion and orbital radius D,A of donors and acceptors electron m* e4 Eion = ~50 meV 8K² &²h² 4πεερη2 "D,A 1 nm m*e² Orbit of an electron bound to a donor in a semiconductor crystal. Energy levels of donors and acceptors Conduction Band ↓ Ec -Ed Donor Level Donor ionization energy Acceptor ionization energy Acceptor Level Εα Ev Valence Band Ionization energy of selected donors and acceptors in silicon Donors Acceptors Dopant Sb P As B Al In Ionization energy, Ec-Ed or Ea-E, (meV) 39 44 54 45 57 160 Hydrogenic model of donors and acceptors Calculate the ionization energies and orbit radii of donors and acceptors in Si and Ge. Dielectric constant of silicon is k = 11.7. Dielectric constant of…arrow_forward
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