Engineering Electromagnetics
Engineering Electromagnetics
9th Edition
ISBN: 9780078028151
Author: Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher: Mcgraw-hill Education,
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Chapter 11, Problem 11.23P
To determine

(a)

The value of the resistance per unit length of dc R(dc).

To determine

(b)

The value of the resistance per unit length of frequency 20 MHz.

To determine

(c)

The value of resistance per unit length of frequency 2 GHz.

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Figure 2 3) *** The circuit of Figure 3 is designed with W/L = 20/0.18, λ= 0, and ID = 0.25 mA. (Optional- 20 points) a) Compute the required gate bias voltage. b) With such a gate voltage, how much can W/L be increased while M1 remains in saturation? What is the maximum voltage gain that can be achieved as W/L increases? VDD = 1.8 V RD 2k - Vout Vin M₁ Figure 3
1) Rs = 4kQ, R₁ = 850 kQ, R₂ = 350 kQ, and R₁ = 4 kQ. The transistor parameters are VTP = -12 V, K'p = 40 µA / V², W/L = 80, and λ = 0.05 V-1. (50 Points) a) Determine IDQ and VSDQ. b) Find the small signal voltage gain. (Av) c) Determine the small signal circuit transconductance gain. (Ag = io/vi) d) Find the small signal output resistance. VDD = 10 V 2'; www www Figure 1 Сс
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