Why are semiconductors referred to as non-ohmic?
Q: how does the band structure of a solid makes it an insulator, semiconductor or conductor?
A: Explanation: Conductor: The conductor is a material that contains free movable charges which conduct…
Q: Which of the following are true about semiconductors? Select all that apply. A large band gap…
A: Let's check each option one by A large band gap requires electrons to have a large change in energy…
Q: What are the essential characterstic of a semiconductor?
A: Semiconductor is a material which has it conductivity between an insulator and a conductor, which is…
Q: Are there more electrons at the bottom or in the middle of the conduction band of a semiconductor?
A: As we know that the charges at the top of the band have highly energy and in the bottom electron…
Q: Why the conductivity of a pure semiconductor increases with temperature?
A:
Q: Why the conductivity of metals increase with decrease in temperature, but conductivity of…
A: The conductivity of metals is defined by sigma=nqm wheren= charge carrier density q=charge of the…
Q: Energy (eV) OK is 1.425 eV, α = d) If the energy gap of the InP semiconductor at T = 4.5 x 10-4 eV/K…
A:
Q: the carrier distribution in the conduction band is:nc(E) = gc(E) . f(E) a) For a non-degenerate…
A: The objective of the question is to demonstrate that the carrier distribution in the conduction band…
Q: (c) Draw diagrams showing how a semiconductor diode functions.
A:
Q: At room temperature the semiconductor Si has an energy gap of AE = 1.12 eV, that separates the…
A: The ratio of number of electrons in the higher energy level to the number in the lower energy level…
Why are semiconductors referred to as non-ohmic?
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To explain why the semiconductors are non-ohmic as,
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- (12)It is true that one can force a polished flat end of a p type silicon to a flat end of an n type silicon to form a good p-n junction? Why?A region of N-type semiconductor doped by Nd=10^15 cm^-3 is fully depleted of both majority and minority carriers by an external electric field. Assuming that the concentration of electron-hole pairs that is generated per unit time does not change when the semiconductor is depleted, determine the effective generation rate if the semiconductor is (a) Si (ni = 1.02 × 1010 cm-3) and (b) GaAs (ni = 2.1 × 106 cm-3). The minority-carrier lifetime is 1 μs in both cases.