What kind (p-type or n-type) of semiconductor is made if pure germanium is doped with a small amount of (a) phosphorous? (b) gallium?
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Q: Silicon is doped with 3×1018 arsenic atoms/cm3 and 8 × 1018 boron atoms/cm3. (a) Is this n- or…
A: Given , Silicon is doped with 2×1018 arsenic atoms/cm3 and 8×1018 boron atoms/cm3. Arsenic is…
Q: Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018…
A: Here we can see, ND >>ni .......................................................... since,…
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A: Here,ni = 4×1011 cm-3nh= 2×1016 cm-3
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Q: Inert concentration in germanium semiconductor material at T=400K(x10^14 per cm^3)
A: SOlurtion: Given that Gemanium semicondcutor T=400K(x10^14 per cm^3)
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A:
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A: The intrinsic carrier density ni= 1.5 x 1010 /cm3 FOR THE BARRIER POTENTIAL AT JUNCTION 1 The…
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A: As we know p-type semiconductor consists of holes in majority and electrons in minority as carriers…
What kind (p-type or n-type) of semiconductor is made if pure germanium is doped with a small amount of (a) phosphorous? (b) gallium?
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