What is the cnergy difference in eV between the two lowest rotational levels of the HD molecule? The HD (D is a deuteron) distance is 0.75 Å.
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- The transition from theℓ = 2 to the ℓ = 1 state in CO is accompanied by the emission of a 9.55 x 10-4 eV photon. (a) Use this information to fi nd the rotational inertia of the CO molecule. (b) What is the bond length between the C and O atoms?Consider the pure rotational spectrum of NO molecule. If the bond length of NO is 0.115 nm, calculate the wavelength corresponding to the transition with the rotational quantum number changing from J = 4 to J = 3.A rotational band based on the state 1 = 7/2" is known in 179W. The 9/2 state is at an excitation of 120 KeV; Predict the excitation of the 11/2, 13/2 and 15/2 levels.
- Suppose the distance between the two atoms is equal to the equilibrium distance found in part A. What minimum energy must be added to the molecule to dissociate it-that is, to separate the two atoms to an infinite distance apart? This is called the dissociation energy of the molecule. For the molecule CO, the equilibrium distance between the carbon and oxygen atoms is 1.13×10−10m and the dissociation energy is 1.54×10−18J per molecule. Find the value of the constant a. Find the value of the constant b.The mass of the most common silicon atom is 4.646 * 10-26 kg, and the mass of the most common oxygen atom is 2.656 * 10-26 kg. When a molecule of silicon monoxide (SiO) makes a transition between the l = 1 and l = 0 rotational levels, it emits a photon of wavelength 6.882 mm. Find the distance between the Si and O nuclei.The electron affinity of Cl is 3.61 eV whereas the ionization energy of K is 4.34 eV. How far apart must two molecules be for the KC1 molecule to accumulate enough Coulomb energy to outpace the energy required to create the K+ and (I-) ions?
- Assume a temperature of 300 K and fi nd the wavelength of the photon necessary to cause an electron to jump from the valence to the conduction band in (a) germanium, (b) silicon, (c) InAs, and (d) ZnS.A silicon abrupt pn junction in thermal equilibrium at T = 300K is doped under the following conditions: p-side: Erp Ev = 0.18cV - n-side: EcEFn = 0.21eV Draw the energy band diagram of the pn junction Determine the impurity doping concentrations in each region Determine the build in voltage Vbi Find the depletion width in each region xp and x under 0 applied bias V₁ = a OV