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Q: The hole density in an n-type Si slab (doped at Na = 10¹8 cm-3) decreases linearly from 10¹4 cm to…
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Q: An experiment is performed to demonstrate the Hall effect. A thin rectangular strip of conducting…
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Q: Cite the indices of the direction that results from the intersection of ( 110 ) and ( 111 ) in a…
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Q: A sample of Si is doped with 1016 phosphorus atoms /cm3, find the Hall voltage in a sample with…
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Q: magnetization is 1.7x10^6A/m , that iron has a BCC crystal structure, and th
A: Givensaturation magnetization ,Ms=1.7×106 A/munit cell edge length, a= 0.2866nm
Q: The magnetic susceptibility in the Curie-Weiss model is given by 1 T-Tc' χα where To is the Curie…
A: According to the Curie-Weiss model, the magnetic susceptibility is given as,where T is the absolute…
Q: A paramagnetic crystal contains N magnetic ions which possess spin 1/2 and a magnetic dipole moment…
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Q: Explain what is meant by a hole in a semi-conductor, and why the effective mass of a hole can be…
A: Given thathole in semi conductorFind that explain what is mean by a hole in semi conductor and why…
Q: I=1,(1-exp(-a x)
A: In the given equation I=I01-exp-αxα=it is the absorption coefficient of the mediumI0=Initial…
Q: In order to observe Landau levels and related effects, the separation of the levels should be…
A: In order to observe Landau levels and related effects, the separation of levels should be comparable…
Q: The paramagnetic susceptibility of one mole material-X (insulator) at 300 K is 316.25 x 10-5 (or…
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Recall that the magnetic fi eld at the surface of a uniform cylindrical wire of radius R carrying a current I is
Find the minimum possible diameter for a wire of pure niobium so that the T = 0 critical fi eld would not be exceeded if the wire carried a current of 2.5 A.
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- A planar optical waveguide of length = 5 cm is fabricated in an epitaxial layer of GaAs that has an n-type doping concentration of 1×10¹8/cm³. (a) What is ratio to the input power of the total power lost over the length of the waveguide that results from free-carrier absorption? (b) What is the answer to part (a) if the doping concentration is reduced to 1x10¹6/cm³?Discuss the current conduction in n-type and p-type conductors.A hydrogen isotope separator contains positively ionized hydrogen H^1, with isotope of hydrogen, Deuterium D^2, and other heavy particles, and the ions were released in a potential difference of 200 Volts. The strong magnetic field of 1.4x10^-2 Tesla (out of the page), bends the ions and Deuterium is collected on separate ionic trap as shown in the figure. (Masses MH1=1.67x10^-27 kg, MD2 = 2* MH1, Q(H1, D2) = 1.6x10^-19 C) What are the velocities of the Deuterium when exiting the plates, in unit of 10^5 m/s?
- A hydrogen isotope separator contains positively ionized hydrogen H^1, with isotope of hydrogen, Deuterium D^2, and other heavy particles, and the ions were released in a potential difference of 200 Volts. The strong magnetic field of 1.4x10^-2 Tesla (out of the page), bends the ions and Deuterium is collected on separate ionic trap as shown in the figure. (Masses MH1=1.67x10^-27 kg, MD2 = 2* MH1, Q(H1, D2) = 1.6x10^-19 C. What is the potential energy of plates having the voltage difference of 200 Volts acting on Deuterium in unit of 10^-17 Joules?An SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After oxidation, it is shifted to 78 eV. Therefore, pure and oxidized silicon are easily distinguishable. When the surface is oxidized, the silicon 91 eV peak intensity decreases because of attenuation by the silicon dioxide layer. After an SiO2 layer of thickness t is formed, the 91 eV Auger peak drops to 15% of its clean surface value. The angle of electron collection is 45o from the surface normal. If the mean free path is 0.5 nm for 91 eV electrons in silicon dioxide, what is the thickness t of the oxide coatingIt is possible to produce very high magnetic fields over small volumes by special techniques. What would be the resonance frequency of an electron spin in an organic radical in a field of 1.0 kT? How does this frequency compare to typical molecular rotational, vibrational, and electronic energy-level separations?
- Compute the magnitude of the electrostatic attraction energy between a silver cation (radius 129 pm) and a sulfide anion (radius 170 pm). Give your answer in al.5.47 Germanium is doped with 5 × 10¹5 donor atoms per cm³ at T = 300 K. The dimen- sions of the Hall device are d = 5 x 10-³ cm, W = 2 × 10-² cm, and L = 10-¹ cm. The current is I = 250 μA, the applied voltage is V. = 100 mV, and the magnetic flux density is B₂ = 500 gauss = 5 x 10-2 tesla. Calculate: (a) the Hall voltage, (b) the Hall field, and (c) the carrier mobility.Q.1. The metals Cu and Pb have diamagnetic susceptibilities -9.63×10-6 and -1.58x10-5, respectively. Furthermore, Pb is a superconductor with T=7.2 K and Bo=800 G. Compare the magnetic energies of Cu and Pb in an external field of 500 G at 7.5 K and 0.1 K; assume the long-wire geometry with the field parallel to the wire. What is the principal difference in the free energy of the Pb sample at the two temperatures and in the presence of the field?