QUESTION 4The energy gap of GaP is 2.26 eV. Show that partial absorption of visible light isa)occurred when GaP wafer exposed to visible light, and the materials appears reddish.For visible light, the photon energy is in the range of 1.8 – 3.1 eV.In some semiconductor material the bottom of conduction band does not lie at theb)origin (k + 0). For the absorption process, the electrons absorb the photon and phononsimultaneously to make a transition from valence band to conduction band.Given the wavelength of photon is 2- 10°m and for optical phonon the wavelength is2~10-9m, respectively. Using the calculated values of energy and momentum ofphonon and photon, explain the main roles of photon and phonon for the transitionproses. (Given phonon velocity, Vph = 3000 ms-', speed of light, c = 3 x 108 ms1 andPlank constant, h= 4.1357 x 10-15 eVs)

Given, Energy band gap of GaP, ∆Eg = 2.26 eV For visible light, energy range is 1.8 - 3.1 eV

The energy gap of GaP is 2.26 eV. Show that partial absorption of visible light is occurred when GaP wafer exposed to visible light, and the materials appears reddish. For visible light, the photon energy is in the range of 1.8 -3.1 eV.

The energy gap of GaP is 2.26 eV. Show that partial absorption of visible light is occurred when GaP wafer exposed to visible light, and the materials appears reddish. For visible light, the photon energy is in the range of 1.8 -3.1 eV.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

1 . 1 Explain the detection process in a pn diode. ( 4 ) 1 . 2 A pn photodiode has a quantum efficiency of 6 4 % for photons of energy 1 . 5 2 × 1 0 - 1 9 � . Calculate the wavelength at which the diode is operating and also the optical power required to achieve a photocurrent of 3 � � at the calculated wavelength. ( 6 ) 1 . 3 A square Si PIN photodiode ( 1 1 0 � � × 1 1 0 � � with a specific detectivity of 4 × 1 0 1 0 � � � 1 2 � operates at a wavelength of 1 5 5 0 nm . The quantum efficiency is 6 0 % . Assume that the dominant noise source is due to dark current noise. 1 . 3 . 1 Calculate the magnitude of the dark current in a 1 Hz bandwidth. ( 6 ) 1 . 3 . 2 Determine the photocurrent. 1 . 3 . 3 Calculate the smallest detectable signal power at this wavelength when the signal bandwidth is 2 5 kHz . ( 4 ) [ 2 4 ]
GaAs and GaP make solid solutions that have the samecrystal structure as the parent materials, with As and P randomlydistributed throughout the crystal. GaPxAs1 - x existsfor any value of x. If we assume that the band gap varies linearlywith composition between x = 0 and x = 1, estimatethe band gap for GaP0.5As0.5. (GaAs and GaP band gaps are1.43 eV and 2.26 eV, respectively.) What wavelength of lightdoes this correspond to?
2.24 InP is doped with ND = 2.0 × 10 15 cm³ and NA = 1014 cm³. Draw the energy band diagram and calculate the location of the Fermi level.
Which of the following statements is not true about the linear polarization technique? a) Measurements begin at-20 mV from OCP and end around +100 mV from OCP b) The slope of the plot is AE/AC is given in volts/amperes or mV/mA c) This technique can be used to determine very low rate of corrosion d) It can be used to monitor corrosion rate in process plant
Calculate the typical photon energy and momentum for Si and compare it with the typical phonon energy and momentum. (Eg = 1.11 eV, h = 6.62 x 10-34 J.s, lattice constant λphonon = a0 = 5.65 x 10-10 m, vs = 5 x 103 m/s) Comment on your results. What is the role of phonons in transitions from VB to CB in an indirect gap semiconductor?
question in photo plz
A p-n photodiode has a quantum efficiency of 67 % at a wavelength of 0.9 pm .Calculatea. Its responsivity at 0.9 pmb. The received optical power if the mean photocurrent is 10-2+1 mW.
question in photo plz
The Fermi level of an n-type Si is 0.15 eV below the conduction band edge. What is the approximate electron concentration (cm-)? (Assume the band gap energy of Si is 1.1 eV at 300 K. nj = 1.5x1010 cm-3. Kg=1.38x10-23 J/K) (Please round up the answer to 3 decimal places.) Please choose one: a) 04.541 x 1016 b) 02.564 x 1017 c) 07.644 x 1016 d) 03.584 x 1017
B) Calculate the reflection coefficient of the cavity reflectors for semiconductor laser with 500µm length, 820/m attenuation factor and 3000/m threshold gain. Assume the reflections from the both reflectors are equal.
The value of ni for silicon at 127°C is 5.2 x 1012 cm-3. Find the intrinsic carrier concentration at 27°C. Consider Eg = 1.12 eV and k, (Boltzmann's constant ) as 8.62 x 10-5 eV/K.