A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a reverse bias voltage of 30 (V) is applied to the photodiode. If a short pulse of light is absorbed just inside the depletion region on the p*-side of the diode (which the light passes through first), then the photogenerated electrons must drift through the entire i-layer. The quantum efficiency is 0.9 and a 35 (fJ) light pulse at 500 (nm) wavelength is used for photoexcitation. a. How long will the photocurrent last? b. How many electron-hole pairs are generated by absorption of this light pulse? c. Calculate the transient photocurrent?
A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a reverse bias voltage of 30 (V) is applied to the photodiode. If a short pulse of light is absorbed just inside the depletion region on the p*-side of the diode (which the light passes through first), then the photogenerated electrons must drift through the entire i-layer. The quantum efficiency is 0.9 and a 35 (fJ) light pulse at 500 (nm) wavelength is used for photoexcitation. a. How long will the photocurrent last? b. How many electron-hole pairs are generated by absorption of this light pulse? c. Calculate the transient photocurrent?
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![2. A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a
reverse bias voltage of 30 (V) is applied to the photodiode. If a short pulse of light is
absorbed just inside the depletion region on the p*-side of the diode (which the light
passes through first), then the photogenerated electrons must drift through the entire
i-layer. The quantum efficiency is 0.9 and a 35 (fJ) light pulse at 500 (nm) wavelength is
used for photoexcitation.
a. How long will the photocurrent last?
b. How many electron-hole pairs are generated by absorption of this light pulse?
c. Calculate the transient photocurrent?](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F35cfb97f-d7be-44bc-ac1c-af70745ef9d4%2Fa5c1a920-69ff-40ac-aee1-5b0e31f528cf%2Fu71avp_processed.png&w=3840&q=75)
Transcribed Image Text:2. A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a
reverse bias voltage of 30 (V) is applied to the photodiode. If a short pulse of light is
absorbed just inside the depletion region on the p*-side of the diode (which the light
passes through first), then the photogenerated electrons must drift through the entire
i-layer. The quantum efficiency is 0.9 and a 35 (fJ) light pulse at 500 (nm) wavelength is
used for photoexcitation.
a. How long will the photocurrent last?
b. How many electron-hole pairs are generated by absorption of this light pulse?
c. Calculate the transient photocurrent?
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