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Si is doped with 1016 cm-3 boron impurity atoms and with certain number of shallow holes. The Fermi energy is 0.36eV above the Ei (intrinsic Fermi energy) at 300K. The energy gap, Eg, of Si is 1.2eV. The value of ni at 300K is 1.5 x 1010 cm-3 and k = 1.38 x 10-23 J/K, 1eV = 1.60 x 10-19J. (i) What is the electron concentration? (ii) What is the donor concentration at 300K? (iii) What is the free electron concentration in Si at 300K?

Si is doped with 1016 cm-3 boron impurity atoms and with certain number of shallow holes. The Fermi energy is 0.36eV above the Ei (intrinsic Fermi energy) at 300K. The energy gap, Eg, of Si is 1.2eV. The value of ni at 300K is 1.5 x 1010 cm-3 and k = 1.38 x 10-23 J/K, 1eV = 1.60 x 10-19J. (i) What is the electron concentration? (ii) What is the donor concentration at 300K? (iii) What is the free electron concentration in Si at 300K?

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Si is doped with 1016 cm-3 boron impurity atoms and with certain number
of shallow holes. The Fermi energy is 0.36eV above the Ei (intrinsic
Fermi energy) at 300K. The energy gap, Eg, of Si is 1.2eV. The value of
ni at 300K is 1.5 x 1010 cm-3 and k = 1.38 x 10-23 J/K, 1eV = 1.60 x 10-19J.
(i) What is the electron concentration? (ii) What is the donor
concentration at 300K? (iii) What is the free electron concentration in Si
at 300K?

Si is doped with 1016 cm-³ boron impurity atoms and with certain number of shallow holes. The Fermi energy is 0.36eV above the Ei (intrinsic Fermi energy) at 300K. The energy gap, Eg, of Si is 1.2eV. The value of n; at 300K is 1.5 x 1010 cm-³ and k = 1.38 x 10-23 J/K, leV=1.60 x 10-1ºJ. (i) What is the electron concentration? (ii) What is the donor concentration at 300K? (iii) What is the free electron concentration in Si at 300K? Solution: Na = 1.71 x 1016 cm³. n = 0.71 x 1016 cm-³ = 7.1 x 1015 cm-³. E, – E, n = n; exp kT
Transcribed Image Text:Si is doped with 1016 cm-³ boron impurity atoms and with certain number of shallow holes. The Fermi energy is 0.36eV above the Ei (intrinsic Fermi energy) at 300K. The energy gap, Eg, of Si is 1.2eV. The value of n; at 300K is 1.5 x 1010 cm-³ and k = 1.38 x 10-23 J/K, leV=1.60 x 10-1ºJ. (i) What is the electron concentration? (ii) What is the donor concentration at 300K? (iii) What is the free electron concentration in Si at 300K? Solution: Na = 1.71 x 1016 cm³. n = 0.71 x 1016 cm-³ = 7.1 x 1015 cm-³. E, – E, n = n; exp kT
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