shstical semiconductor has an intrinsic carrier concentration of 1x1010 cm at 300 K, it has and valence band effective densities of states Nc and Ny both equal to 10 cm. What is the band gap E? if dhe semiconductor is doped with Np-ix10" donors/em', what are the equilibrium electron and hole concentrations at 300 K. tr the same piece of semiconductor, already having ND =1x10 donors/cm', is also doped with NA-2x10 acceptors/cm', what are the new equilibrium electron and hole concentrations at 300 K. di Consistent with your answer to part (c), what is the Fermi-level position with respect to the intrinsic Fermi-level Er-E?

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hetical semiconductor has an intrinsic carrier concentration of 1x100 cm at 300 K, it has
andt valence band effective densities of states Nc and Np both equal to 10'cm.
What is the band gap Eg?
if dhe semiconductor is doped with Np ix10" donors/em', what are the equilibrium
slectron and hole concentrations at 300 K.
tf the same piece of semiconductor, already having ND =1x1016 donors/cm', is also
doped with NA-2x10 acceptors/cm', what are the new equilibrium electron and hole
concentrations at 300 K.
di Consistent with your answer to part (c), what is the Fermi-level position with respect to
the intrinsic Fermi-level Ep-E?
Transcribed Image Text:hetical semiconductor has an intrinsic carrier concentration of 1x100 cm at 300 K, it has andt valence band effective densities of states Nc and Np both equal to 10'cm. What is the band gap Eg? if dhe semiconductor is doped with Np ix10" donors/em', what are the equilibrium slectron and hole concentrations at 300 K. tf the same piece of semiconductor, already having ND =1x1016 donors/cm', is also doped with NA-2x10 acceptors/cm', what are the new equilibrium electron and hole concentrations at 300 K. di Consistent with your answer to part (c), what is the Fermi-level position with respect to the intrinsic Fermi-level Ep-E?
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