s are made on a p-type semiconductor bar 500 u,m wide and 20 u,m thick. The Hall contacts A and B are displaced 2 p-m with respect to each other in the direction of current flow of 3 mA. The voltage between A and B with a magnetic field of 10 kG (lkG = 10^-5 Wb/cm2) pointing out of the plane of the sample is 3.2 mV. When the magnetic field direction is reversed the voltage changes to - 2 .8 mV. What is the hole concentration and mobility?
s are made on a p-type semiconductor bar 500 u,m wide and 20 u,m thick. The Hall contacts A and B are displaced 2 p-m with respect to each other in the direction of current flow of 3 mA. The voltage between A and B with a magnetic field of 10 kG (lkG = 10^-5 Wb/cm2) pointing out of the plane of the sample is 3.2 mV. When the magnetic field direction is reversed the voltage changes to - 2 .8 mV. What is the hole concentration and mobility?
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Hall measurements are made on a p-type semiconductor bar 500 u,m wide and
20 u,m thick. The Hall contacts A and B are displaced 2 p-m with respect to
each other in the direction of current flow of 3 mA. The voltage between A
and B with a magnetic field of 10 kG (lkG = 10^-5 Wb/cm2) pointing out of the
plane of the sample is 3.2 mV. When the magnetic field direction is reversed the
voltage changes to - 2 .8 mV. What is the hole concentration and mobility?
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