QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n-type and doped with 1 x 1015 cm³ donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 1019 cm3 and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 1015 cm³ at T=400K. What is the minimum value of the band gap energy?
QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n-type and doped with 1 x 1015 cm³ donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 1019 cm3 and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 1015 cm³ at T=400K. What is the minimum value of the band gap energy?
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Transcribed Image Text:QUESTION:3
A special semiconductor material is to be "designed". The semiconductor is to be n-type and
doped with 1 x 1015 cm3 donor atoms. Assume complete ionization and that Na=0. The
effective density of state functions are given by Nc = Nv =1.5 x 1019 cm3 and are
independent of temperature. A particular semiconductor device fabricated with this
material requires the electron concentration to be no greater than 1.01 x 1015 cm3 at
T=400K. What is the minimum value of the band gap energy?
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