QUESTION The total junction capacitance of a silicon p-n' junction at T=300° K is measured at reverse bias of 30 mV and found to be 1.1 pF. The junction area is 10 cm with a built-in potential of 0.75 volt. Find the impurity doping concentration of the higher-doped region. (g=103.54x10, n-10" cm)

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The total junction capacitance of a silicon p-n junction at T=300° K is measured
at reverse bias of 30 mV and found to be 1.1 pF. The junction area is 10 cm
with a built-in potential of 0.75 volt. Find the impurity doping concentration of
the higher-doped region. (s=103.54x10, n-10 cm)
Transcribed Image Text:QUESTION The total junction capacitance of a silicon p-n junction at T=300° K is measured at reverse bias of 30 mV and found to be 1.1 pF. The junction area is 10 cm with a built-in potential of 0.75 volt. Find the impurity doping concentration of the higher-doped region. (s=103.54x10, n-10 cm)
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