Q3) The ECL circuit as shown in fig. 3 has:(VBE (ECL) = 0.75V, B = 99, VBC (sat) = 0.6VAnd VOH(min) (VOH - 0.04), determine:-1. The dissipation power (avg.).2. The IoH and IiH when excluding red-coloredcomponents.(12 Marks)NGRCIBRCIARCRQBO100100112LoVoALQIAQR1 0 QR2 QIBVBB-1,31REA 365VEE365 REB¥ 5.2

Answered: Image /qna-images/answer/4b1d86b3-4b91-4722-8291-3ed094b02f75.jpg

Answered: Q3) The ECL circuit as shown in fig. 3…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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can you show more work on the KCL eqn?
Kindly answer the following question (as soon as possible) #24
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
Pls help ASAP. Pls show all work.
Please answer the questions 1 c, and d with details on why it is true or false. Please make handwriting legible. Thank you.
Problem 5 Find the zero-state step responses for ilt) and vlt). ult) A llll /01 个1
Please answer in typing format please ASAP for the like please clear the solution of above question is given to Please answer in typing format please ASAP for the like please
Problem 8. You are given a MOSCap consisting of a W metal electrode, SiO2 as an oxide, and p-type Si as the doped semiconductor. If you apply 0 V to the gate and +5V to the p-type Si body, what mode is the operating region of the MOSCap and what carrier do you expect to see at the interface of the oxide and p-type Si interface?
This question would help revise concepts related to MOS device and basic circuit design. Please mark all correct answers to the following multiple choice questions. 1.1. Which of the following are true about MOSFET devices? (a) MOS stands for "Metallurgy Of Semiconductors" (b) MOSFET current conduction is due to drift phenomenon (c) An externally induced voltage at the gate is fundamental to inversion layer (d) Naming of "Source" and "Drain" regions are only dependent on aspect ratio 1.2. Which of the following are true about NMOS transistors (a) The threshold voltage can be positive or negative depending on geometry (b) Channel length modulation parameter (A) is always positive (c) Current flows from drain to source (d) Threshold voltage is a fixed value based on process, it cannot be changed by external voltages 1.3. In a MOS device (a) Cas and CGp both have both geometry and voltage dependencies (b) Cas is takes minimum value at saturation while CGD goes to maximum value (c) CoB and…
Please do as soon as poosible
For a common base configuration of BJT, if a = 0.94 and IC = 1.136 mA, calculate the current IE, O a. 0.8274 mA O b. 1.2085 mA O c. 2.3445 mA O d. 0.07 mA
8. A band diagram of an MOS capacitor under constant gate voltage VG>0 is illustrated in the figure. What can we say about the type of the semiconductor and the state the capacitor in? a. P-type substrate, Depletion regime b. N-type, Accumulation regime c. P-type, Inversion regime d. N-Type, Depletion regime -E₁ -E

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