4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor parameters are: VTN = 0.8 V, K = 1 mA/V², and λ = 0. The circuit para- meters are VDD =5V, Rs = 1k, RD =4k, R₁ = 225 k2, and R₂ = 175 ks. (a) Calculate the quiescent values Ing and VDsq. (b) Deter- mine the small-signal voltage gain for RL = 0. (c) Determine the value of RL that will reduce the small-signal voltage gain to 75 percent of the value found in part (b). VDD ww R₁ Rp ww Rin Ca اکھ ww Figure P4.15 Rs ww RL ww +

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4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor
parameters are: VTN = 0.8 V, K = 1 mA/V², and λ = 0. The circuit para-
meters are VDD =5V, Rs = 1k, RD =4k, R₁ = 225 k2, and
R₂ = 175 ks. (a) Calculate the quiescent values Ing and VDsq. (b) Deter-
mine the small-signal voltage gain for RL = 0. (c) Determine the value of
RL that will reduce the small-signal voltage gain to 75 percent of the value
found in part (b).
VDD
ww
R₁
Rp
ww
Rin
Ca
اکھ
ww
Figure P4.15
Rs
ww
RL
ww
+
Transcribed Image Text:4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor parameters are: VTN = 0.8 V, K = 1 mA/V², and λ = 0. The circuit para- meters are VDD =5V, Rs = 1k, RD =4k, R₁ = 225 k2, and R₂ = 175 ks. (a) Calculate the quiescent values Ing and VDsq. (b) Deter- mine the small-signal voltage gain for RL = 0. (c) Determine the value of RL that will reduce the small-signal voltage gain to 75 percent of the value found in part (b). VDD ww R₁ Rp ww Rin Ca اکھ ww Figure P4.15 Rs ww RL ww +
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