Q3:- A bar of p-type silicon, has a cross-sectional area A =106 cm2 and a length L= 1.2x103 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?

Q3:- A bar of p-type silicon, has a cross-sectional area A =106 cm2 and a length L= 1.2x103 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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Concept explainers

Electrical Heating Unit

The conversion of electrical energy to heat energy is known as electric heating. The heating system that converts the electrical energy to heat energy for various application is called electrical heating unit. Electricity is employed as the firing mechanism in electric heating systems, which transforms electric current to heat. Electric heaters have heating elements in the form of electric resistors.

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Q3:- A bar of p-type silicon, has a cross-sectional area A = 106 cm2 and a length L= 1.2x103 cm.
For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance,
(b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?

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