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Q.1. (A) determines whether each statement is true false. 1. For a JFET configuration, given that; Ipss = IDQ 4.5 mA, then VGsQ = (-1.5 V). 8 mA and V = (-4 V), and 2. Voltage gain of the source - follower configuration is always slightly less than one. 3. For the JFET configuration, if (VGsp = 0.5 V), then IDQ = IDSs 4. Transconductance (gm) of FET is a ratio of change in drain current to change in gate voltage. 5. V and V are in phase for the JFET common-gate configuration. 6. For an n-channel JFET with r, equal to (10 k2), where (VGS=-3V, Vp=-6V), then ra will result in 40 k. 7. Z; Z. and A, of the voltage-divider bias E-MOSFET configuration are high. 8. Ico (reverse saturation current): doubles in value for every 100°C increase in temperature. (B) Why JFET transistor is a voltage-controlled device?

Q.1. (A) determines whether each statement is true false. 1. For a JFET configuration, given that; Ipss = IDQ 4.5 mA, then VGsQ = (-1.5 V). 8 mA and V = (-4 V), and 2. Voltage gain of the source - follower configuration is always slightly less than one. 3. For the JFET configuration, if (VGsp = 0.5 V), then IDQ = IDSs 4. Transconductance (gm) of FET is a ratio of change in drain current to change in gate voltage. 5. V and V are in phase for the JFET common-gate configuration. 6. For an n-channel JFET with r, equal to (10 k2), where (VGS=-3V, Vp=-6V), then ra will result in 40 k. 7. Z; Z. and A, of the voltage-divider bias E-MOSFET configuration are high. 8. Ico (reverse saturation current): doubles in value for every 100°C increase in temperature. (B) Why JFET transistor is a voltage-controlled device?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q.1. (A) determines whether each statement is true false. 1. For a JFET configuration, given that; Ipss = IDQ 4.5 mA, then VGsQ = (-1.5 V). 8 mA and V = (-4 V), and 2. Voltage gain of the source - follower configuration is always slightly less than one. 3. For the JFET configuration, if (VGsp = 0.5 V), then IDQ = IDSs 4. Transconductance (gm) of FET is a ratio of change in drain current to change in gate voltage. 5. V and V are in phase for the JFET common-gate configuration. 6. For an n-channel JFET with r, equal to (10 k2), where (VGS=-3V, Vp=-6V), then ra will result in 40 k. 7. Z; Z. and A, of the voltage-divider bias E-MOSFET configuration are high. 8. Ico (reverse saturation current): doubles in value for every 100°C increase in temperature. (B) Why JFET transistor is a voltage-controlled device?
Transcribed Image Text:Q.1. (A) determines whether each statement is true false. 1. For a JFET configuration, given that; Ipss = IDQ 4.5 mA, then VGsQ = (-1.5 V). 8 mA and V = (-4 V), and 2. Voltage gain of the source - follower configuration is always slightly less than one. 3. For the JFET configuration, if (VGsp = 0.5 V), then IDQ = IDSs 4. Transconductance (gm) of FET is a ratio of change in drain current to change in gate voltage. 5. V and V are in phase for the JFET common-gate configuration. 6. For an n-channel JFET with r, equal to (10 k2), where (VGS=-3V, Vp=-6V), then ra will result in 40 k. 7. Z; Z. and A, of the voltage-divider bias E-MOSFET configuration are high. 8. Ico (reverse saturation current): doubles in value for every 100°C increase in temperature. (B) Why JFET transistor is a voltage-controlled device?
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