A BiCMOS circuit with Vcc= 6V is shown in the figure below. The voltage VB is set such that the circuit has a DC output voltage of 3V and the BJT has the following parameters: Is = 35fA, VCE,sat = 0.2V, B = 100, and VA → ∞o, and the MOSFET parameters are: VTH = 0.5V and = 1.602. Assume that C → ∞ and use V₁ = 26mV. kn Vcc VB M₁ Rx •1ΚΩ -"OUT • 500 Ω Determine the value of VB and Rx that will satisfy the relationship between ID1 and Ic2 if the current relationship is: Ic2 is FOUR times greater than ID1.

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Types of Thyristors

With four layers of alternating P- and N- materials, a thyristor is a solid-state semiconductor device. It acts as a type of bi-stable switch and it conducts when the gate receives a current trigger and continues to conduct until the voltage is reverse biased across the device or by some means until the voltage is removed. The silicon-controlled rectifier is considered synonymous with thyristors by some sources. Thyristors are defined as more complex by other sources as it contains at least four-layer of alternating N-type and P-type substrate. They find large applications in the control of electrical power supplies, electric motor speed control, and ranging of light dimmers because thyristors can control large amounts of power supplies and voltage with a small device. The circuit symbol of the thyristor is given below.