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O An MOS structure made on a silicon wafer doped with 3.8 x 10¹5 cm-³ phosphorous atoms has a 40 nm thick silicon oxide layer and an aluminium contact. Assuming a temperature of 300 K: (i) (ii) Calculate the maximum and minimum capacitances of the resulting MOS capacitor. Draw a capacitance-voltage curve of the capacitor when operated at a frequency of 0.5 Hz. Clearly label the regions that correspond to the distinct bias conditions of the device.

O An MOS structure made on a silicon wafer doped with 3.8 x 10¹5 cm-³ phosphorous atoms has a 40 nm thick silicon oxide layer and an aluminium contact. Assuming a temperature of 300 K: (i) (ii) Calculate the maximum and minimum capacitances of the resulting MOS capacitor. Draw a capacitance-voltage curve of the capacitor when operated at a frequency of 0.5 Hz. Clearly label the regions that correspond to the distinct bias conditions of the device.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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a) An MOS structure made on a silicon wafer doped with 3.8 x 10¹5 cm-³ phosphorous atoms has a 40 nm thick silicon oxide layer and an aluminium contact. Assuming a temperature of 300 K: (i) (ii) Calculate the maximum and minimum capacitances of the resulting MOS capacitor. Draw a capacitance-voltage curve of the capacitor when operated at a frequency of 0.5 Hz. Clearly label the regions that correspond to the distinct bias conditions of the device.
Transcribed Image Text:a) An MOS structure made on a silicon wafer doped with 3.8 x 10¹5 cm-³ phosphorous atoms has a 40 nm thick silicon oxide layer and an aluminium contact. Assuming a temperature of 300 K: (i) (ii) Calculate the maximum and minimum capacitances of the resulting MOS capacitor. Draw a capacitance-voltage curve of the capacitor when operated at a frequency of 0.5 Hz. Clearly label the regions that correspond to the distinct bias conditions of the device.
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