Now we can determine the value for the W/L ratio of the NMOS switching device from the MOS drain current expression using the circuit conditions in Fig. 6.12(b). In this case, the input is set equal to V = 2.5 V, and the output of the inverter should then be at V. The expression for the drain current in the triode region of the device is used because vGS - VTN = 2.5 V-0.6 V = 1.9 V, and vps = V = 0.20 V, yielding vps < vGs – VyN- VDD = 2.5 V IpD 28.8 k2 o vo = VL 80 μΑ Ms + Vos = 0.20 V 2.22 Uj = Vµ=2.5 V EXERCISE: Redesign the logic gate in Fig. 6.12 to operate at a power of 0.4 mW while main- taining V = 0.20 V. %3D ANSWER: (W/L)s= 4.44/1; R= 14.4 k2

Now we can determine the value for the W/L ratio of the NMOS switching device from the MOS drain current expression using the circuit conditions in Fig. 6.12(b). In this case, the input is set equal to V = 2.5 V, and the output of the inverter should then be at V. The expression for the drain current in the triode region of the device is used because vGS - VTN = 2.5 V-0.6 V = 1.9 V, and vps = V = 0.20 V, yielding vps < vGs – VyN- VDD = 2.5 V IpD 28.8 k2 o vo = VL 80 μΑ Ms + Vos = 0.20 V 2.22 Uj = Vµ=2.5 V EXERCISE: Redesign the logic gate in Fig. 6.12 to operate at a power of 0.4 mW while main- taining V = 0.20 V. %3D ANSWER: (W/L)s= 4.44/1; R= 14.4 k2

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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