Problem 5In Si the electron and hole drift mobilities at room temperature are 1400 and 450 cm? V-1 S-1.Assume that the intrinsic concentration of carriers is 1x1010cm-3 determine the electricalconductivity. Assuming that Si density is 2.33 g/cm³, is 0.01 atomic percent of atoms arereplaced with Phosphorus, and 90% of the phosphorus dopant are excited to the conductionband, calculate the resistivity of the doped semiconductor.

The conductivity of an electrolyte solution is defined as the tendency of the material to conduct…

Answered: In Si the electron and hole drift…

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