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In an n-channel MOSFET having ion concentration NA = 1015 cm-3. The gate oxide thickness is 50 nm, calculate the maximum space charge width and threshold voltage (e, for silicon is 11.9, e, for Si0, is 3.9, n; = 1.5 x 1010 cm-3).

In an n-channel MOSFET having ion concentration NA = 1015 cm-3. The gate oxide thickness is 50 nm, calculate the maximum space charge width and threshold voltage (e, for silicon is 11.9, e, for Si0, is 3.9, n; = 1.5 x 1010 cm-3).

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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In an n-channel MOSFET having ion concentration NA = 1015 cm-3. The gate oxide thickness is 50 nm, calculate the maximum space charge width and threshold voltage (e, for silicon is 11.9, e, for Si0, is 3.9, nį = 1.5 x 1010 cm-3).
Transcribed Image Text:In an n-channel MOSFET having ion concentration NA = 1015 cm-3. The gate oxide thickness is 50 nm, calculate the maximum space charge width and threshold voltage (e, for silicon is 11.9, e, for Si0, is 3.9, nį = 1.5 x 1010 cm-3).
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