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A silicon sample is doped with Nd = 10¹7 cm³ of As atoms. (a) What are the electron and hole concentrations and the Fermi level position (relative to Ec or Ev) at 300 K? (Assume full ionization of impurities.) (b) Check the full ionization assumption using the calculated Fermi level, (i.e., find the probability of donor states being occupied by electrons and therefore not ionized.) Assume that the donor level lies 50 meV below the conduction band, (i.e., Ec-ED 50 meV.) = (c) Repeat (a) and (b) for Nd = 1019 cm³. (Discussion: when the doping concentration is high, donor (or acceptor) band is formed and that allows all dopant atoms to contribute to conduction such that “full ionization” is a good approximation after all). (d) Repeat (a) and (b) for Nd = 10¹7 cm³ but T = 30K. (This situation is called dopant freeze-out.)

A silicon sample is doped with Nd = 10¹7 cm³ of As atoms. (a) What are the electron and hole concentrations and the Fermi level position (relative to Ec or Ev) at 300 K? (Assume full ionization of impurities.) (b) Check the full ionization assumption using the calculated Fermi level, (i.e., find the probability of donor states being occupied by electrons and therefore not ionized.) Assume that the donor level lies 50 meV below the conduction band, (i.e., Ec-ED 50 meV.) = (c) Repeat (a) and (b) for Nd = 1019 cm³. (Discussion: when the doping concentration is high, donor (or acceptor) band is formed and that allows all dopant atoms to contribute to conduction such that “full ionization” is a good approximation after all). (d) Repeat (a) and (b) for Nd = 10¹7 cm³ but T = 30K. (This situation is called dopant freeze-out.)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A silicon sample is doped with Nd = 10¹7 cm³ of As atoms. (a) What are the electron and hole concentrations and the Fermi level position (relative to Ec or Ev) at 300 K? (Assume full ionization of impurities.) (b) Check the full ionization assumption using the calculated Fermi level, (i.e., find the probability of donor states being occupied by electrons and therefore not ionized.) Assume that the donor level lies 50 meV below the conduction band, (i.e., Ec-ED 50 meV.) = (c) Repeat (a) and (b) for Nd = 1019 cm³. (Discussion: when the doping concentration is high, donor (or acceptor) band is formed and that allows all dopant atoms to contribute to conduction such that “full ionization” is a good approximation after all). (d) Repeat (a) and (b) for Nd = 10¹7 cm³ but T = 30K. (This situation is called dopant freeze-out.)
Transcribed Image Text:A silicon sample is doped with Nd = 10¹7 cm³ of As atoms. (a) What are the electron and hole concentrations and the Fermi level position (relative to Ec or Ev) at 300 K? (Assume full ionization of impurities.) (b) Check the full ionization assumption using the calculated Fermi level, (i.e., find the probability of donor states being occupied by electrons and therefore not ionized.) Assume that the donor level lies 50 meV below the conduction band, (i.e., Ec-ED 50 meV.) = (c) Repeat (a) and (b) for Nd = 1019 cm³. (Discussion: when the doping concentration is high, donor (or acceptor) band is formed and that allows all dopant atoms to contribute to conduction such that “full ionization” is a good approximation after all). (d) Repeat (a) and (b) for Nd = 10¹7 cm³ but T = 30K. (This situation is called dopant freeze-out.)
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