Homework Help is Here – Start Your Trial Now!
Engineering
Electrical Engineering
In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 3 µW with the internally emitted photons of wavelength 2= 0.6 µm. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: а. 1.255е-6 А O b. 7.980e-6 A С. 4.800е-5 А O d. 1.890e-4 A O e. 1.590e-5 A

In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 3 µW with the internally emitted photons of wavelength 2= 0.6 µm. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: а. 1.255е-6 А O b. 7.980e-6 A С. 4.800е-5 А O d. 1.890e-4 A O e. 1.590e-5 A

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
See similar textbooks
icon
Related questions
Question
In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 3 µW with the internally emitted photons of wavelength 2 = 0.6 µm. If the %3D radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: О а. 1.255е-6 А b. 7.980e-6 A с. 4.800е-5 А d. 1.890e-4 A е. 1.590е-5 А
Transcribed Image Text:In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 3 µW with the internally emitted photons of wavelength 2 = 0.6 µm. If the %3D radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: О а. 1.255е-6 А b. 7.980e-6 A с. 4.800е-5 А d. 1.890e-4 A е. 1.590е-5 А
ll会O0 75% 9:07 4G SiGeGaAsprope. Prof. O M Khrois May 2, 2020 : Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL, CONSTANTS 6.63 x 10-4 J 9.11 x 10-31 Kg Propertics SEMICONDUCTOR Si Ge GaAs E, (eV) n, (cm-) Hn (em" /V - s) Hy (em/V - s) N, (em ) N, (em 3) m/m. 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 10 1.8 x 10" 1.602 x 10-10 C 8.85 x 10-12 F/m 1.05 x 104 J - 8.6 x 10-5 eV/K 26 mV (T = 300 K) 1500 3900 8500 450 1900 400 2.78 x 1019 1.04 x 1019 4.45 x 107 7.72 x 1015 9.84 x 1018 6x 1018 KT/4 0.082 0.98 0.067 KT 26 meV (T = 300 K) m/m. G (F/m) 0.28 0,49 0.45 3 x 10 m/s 11.7 16 13.1 Hair =! GaAs =3.66 Some useful relations EgAL, GaA(r) = 1.424 + 1.247.. Egn.Ga-1A(ar) = (0.36 + 1.064r 1eV = 1.602 x 10-19 1 1 KG = 1 x 10- wb/cm 1
Transcribed Image Text:ll会O0 75% 9:07 4G SiGeGaAsprope. Prof. O M Khrois May 2, 2020 : Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL, CONSTANTS 6.63 x 10-4 J 9.11 x 10-31 Kg Propertics SEMICONDUCTOR Si Ge GaAs E, (eV) n, (cm-) Hn (em" /V - s) Hy (em/V - s) N, (em ) N, (em 3) m/m. 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 10 1.8 x 10" 1.602 x 10-10 C 8.85 x 10-12 F/m 1.05 x 104 J - 8.6 x 10-5 eV/K 26 mV (T = 300 K) 1500 3900 8500 450 1900 400 2.78 x 1019 1.04 x 1019 4.45 x 107 7.72 x 1015 9.84 x 1018 6x 1018 KT/4 0.082 0.98 0.067 KT 26 meV (T = 300 K) m/m. G (F/m) 0.28 0,49 0.45 3 x 10 m/s 11.7 16 13.1 Hair =! GaAs =3.66 Some useful relations EgAL, GaA(r) = 1.424 + 1.247.. Egn.Ga-1A(ar) = (0.36 + 1.064r 1eV = 1.602 x 10-19 1 1 KG = 1 x 10- wb/cm 1
Expert Solution
steps

Step by step

Solved in 2 steps with 2 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Knowledge Booster
Types of Semiconductor Material and Its Energy Band Analysis
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,
SEE MORE TEXTBOOKS