You have the following equation for the binding energy of donor atom on the impurity atom:13.6 m*EK² moE= binding energy in eV.K = Dielectric constant of the semiconductor. m*= effective mass, mo = mass of an e-.For example, if K =1 and m* =1, then the binding energy would be 13.6 eV.If the dielectric constant of Si is 11.7, and binding energy of Sb donor is 0.039 eV and that of Asdonor is 0.054 eV, compute the effective mass (m*/mo in this notation), of the e- at the donor site Sbin Si and the e- at the donor site of As in Si.

Given : the formula of binding energy

If the dielectric constant of Si is 11.7, and binding energy of Sb donor is 0.039 eV and that of As donor is 0.054 eV, compute the effective mass (m*/mo in this notation), of the e- at the donor site Sb in Si and the e- at the donor site of As in Si.

If the dielectric constant of Si is 11.7, and binding energy of Sb donor is 0.039 eV and that of As donor is 0.054 eV, compute the effective mass (m*/mo in this notation), of the e- at the donor site Sb in Si and the e- at the donor site of As in Si.

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

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Question

You have the following equation for the binding energy of donor atom on the impurity atom:
13.6 m*
E
K² mo
E= binding energy in eV.
K = Dielectric constant of the semiconductor. m*= effective mass, mo = mass of an e-.
For example, if K =1 and m* =1, then the binding energy would be 13.6 eV.
If the dielectric constant of Si is 11.7, and binding energy of Sb donor is 0.039 eV and that of As
donor is 0.054 eV, compute the effective mass (m*/mo in this notation), of the e- at the donor site Sb
in Si and the e- at the donor site of As in Si.

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