Show work. Don't give Ai generated solution Gold is a common substrate for surface plasmonresonance (SPR) and quartz crystal microbalance (QCNtechniques because it is(A) dielectric.(B) more prone to oxidation than silver.(C) more reflective than silver at wavelengths shorterthan 550 nm.(D) compatible with surface chemistry/ immobilizatiochemistries.

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Principles of Instrumental Analysis

7th Edition

ISBN:9781305577213

Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch

Chapter12: Atomic X-ray Spectrometry

Section: Chapter Questions

Problem 12.1QAP

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Resistivity measurements at 300 K show that an annealed metal single crystal has amonovacancy concentration CV = 10-9. When the same crystal is quenched from a hightemperature, the measurements indicate CV = 2x10-3. Calculate the temperature of thequench [Take Hf = 51.4 kJ/mol and R = 8.314 J/mol.K]. State any assumption involved. (5)(b) Explain why the esistivity of a metal is expected to be found more at room temperature after quenching. Hint: Use Matthiessen’s rule (find out by self-studying and cite thesource.)
2. (d) Describe three of the functions of the matrix in fibrereinforced composites. (e) With the aid of sketches compare and contrast the fatigue fracture appearance between an alloy that failed at a low fatigue load and one that failed at a high fatigue load. (f) Propose and briefly describe one non-destructive method that can be used to detect small cracks on the surface of a metallic alloy .
write a summary of each of the techniques for measuring vacancyconcentrations, noted therein. (1) Measurements of the quenched-in residual electricalresistivity of aluminium rapidly cooled from temperatures be-low about 800 K with initial quenching rates of 2 × 106 K s−1give the enthalpy of formation of monovacancies H F1V =(0.65 ± 0.01) eV.(2) Comparison of the quenching data with high-temperature differential-dilatometry data gives the monova-cancy formation entropy SF1V = (0.76 ± 0.4)kB (kB =Boltzmann’s constant) and the low-temperature resistivity perunit concentration of vacancies ρ1V = (1.9 ± 0.1) μm.(3) The binding enthalpy of divacancies in Al is H B2V =(0.17 5 ± 0.02 5) eV. This is in agreement with earlier ex-perimental determinations by Doyama and Koehler 48) and byLevy et al. 49, 50) but in marked contrast to the claim of Carlinget al., 23) based on computations with the generalized gradi-ent approximation, that in Al H B2V is zero or even negativeand therefore the…
How does fluorescence work in bulk semiconductors?
55
At room temperature (i.e., 300 K), a semiconductor made of gallium arsenide (GaAs) has an intrinsic electron concentration (ni) of 1.8×10^6 cm^-3 , an electron mobility (μe) of 8500 cm^2 V^1 s^-1 , and a hole mobility (μh) of 400 cm^2 V^-1 s^-1 . \ (a) Calculate the intrinsic electric conductivity and resistivity of GaAs at 300 K. (b) When GaAs is doped with an ionized donor concentration of 10^15 cm^-3 , where is the Fermi level? Calculate the electric conductivity of the doped GaAs. (c) If the semiconductor sample discussed in (b) is further doped with an ionized acceptor concentration of 9×10^14 cm^-3 , what is the free hole concentration and electric conductivity of the sample?
Iron nanoparticles were produced by the evaporation method and their average sizes are estimated 25,50, 90 and 120 nm using the laser particle analyzer. Assuming that the resultant particles are strain freeand the peak broadening detected in the measurement with Cu-K radiation (λ=0.154 nm) arises onlyfrom variation of size of the crystallites, estimate the peak width (the value of FWHM) of the (110) plane.
An atomic beam is designed to function with (a) cadmium, (b) mercury. The source is an oven maintained at 380K with a small slit of dimensions 1.0cm x 1.0 x 10-3cm. The vapor pressure of cadmium is 0.13 Pa nd that of mercury is 12 Pa at this temperature. What is the atomic current (the number of atoms per second) in the beams?
The temperature-dependent form of the extended Debye-Hückel equation is (-1.825 × 10°) (eT)¯ 2 Va log (y) = 1+ 2.00/eT where y is the activity coefficient, e is the dielectric constant of water (a unitless quantity), T is the temperature (in Kevin), z is the charge of the ion, µ is the ionic strength (in moles per liter), and a is the ion size parameter (in picometers). The temperature- dependence of the dielectric constant is given by the equation e = 79.755e(-4.6×10~³)(T–293.15) where the temperature is in Kelvin. What is the value of the activity coefficient of Pb2+ at 70.00 °C when the ionic strength is 0.014 M? étv O, hulu MacBook Pro G Search or type URL 24 4. % & 5 8 R. T. Y U F G H K V. M 0O
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a) Calculate the basicity and acidity of a slag composed of 41 wt% SiO2; 13 wt% FeO; 39 wt% CaO, 7 wt% MgO. (Molecular Weights; Ca: 40.08, O: 16.0, Fe: 55.85, Si: 28.08, Mg: 24.31) b) Describe the formation stage of white matte during the pyrometallurgical production of copper. Calculate the theoretical amount of Cu in the white matte. (Molecular Weights; O: 16, Fe: 55.85, Si: 28.08, Cu: 63.5, S: 32.06).
I) Diamond crystallises in a face-centred cubic structure with a = 3.5625 Å. Calculate the d-spacing and peak position of the first allowed peak (i.e. the peak with the lowest hkl value that meets the selection rules) using a wavelength of 0.71073 Å. II) A solvothermal synthesis gave rise to a mixture of two crystalline phases: one phase consists of 50-65 μm octahedral crystallites while the other phase consists of 150-180 μm hexagonal plates. Identify a separation technique that would likely be effective in separating these materials.

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