Given a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2 , I = 2.5 mA, and the magnetic field is 30 nT (1T = 104 Wb/cm2 ). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobility of the semiconductor sample.

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Hall Effect Sensors

The hall effect sensor is an electronic device designed to detect the effect of the hall, and converts its findings into electronic data, or opening and closing the circuit, providing a magnetic field measurement, processed by an embedded computer or displayed on a visual connector.