GaAs at T=300K is uniformly doped with donor impurity atoms to a concentration of Ng = 2 x 10 cm. Assume an excess carrier lifetime of 5 x 10"s. 10 ст a) Determine the excess electron-hole recombination rate if the excess hole concentration is õp- 5 x 10" cm'. b) What is the lifetime of electrons? c) Determine the thermal equilibrium recombination rate of holes.
GaAs at T=300K is uniformly doped with donor impurity atoms to a concentration of Ng = 2 x 10 cm. Assume an excess carrier lifetime of 5 x 10"s. 10 ст a) Determine the excess electron-hole recombination rate if the excess hole concentration is õp- 5 x 10" cm'. b) What is the lifetime of electrons? c) Determine the thermal equilibrium recombination rate of holes.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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