p3q1 For the given circuit find R3 in terms of the other given variables for the condition of VAB= 0O R3O R3O R3=R3=O R3 = R₁O R3R4==R₁R₂ R4=R₁ R₁VsR₂R₁R₂ R4-VsR₁ R₁R₂O R3 = R₂ +VsR₁mR₂mA BR3MRA

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Answered: For the given circuit find R3 in terms…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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. a) Calculate and plot the current flowing through the pn junctions of device #2 on your 3311 wafer as a function of voltage over the range of -3 volts to plus 1.5 (or so) volts on a linear scale. b) plot the I-V curve for the forward voltage on a log scale. c) What voltages correspond to 10 A/cm2, 100 A/cm2, 1000 A/cm2, 10,000 A/cm2 and 100,000 A/cm2? d) What is the current and current density when the applied voltage is equal to the built-in voltage? e) what are your thoughts on applying a voltage greater than the built-in voltage to a pn junction diode?
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Q3:- Complete the table shown below? A BCBOC AU(Bnc) AUB AUC (AUB)n(AUC) 1 1 1
3.22 A large magnet load consists of an inductance of 18.5 H and resistance of 50 2 is to be supplied from a 400 V, 50 Hz, three-phase source through a fully controlled full-wave, three-phase rectifier bridge as still shown in Fig.3.68. It is required to determine: .AC.SI: 2nAl 1971951 9VW-led 6 26 tos lliw Jim (a) The power delivered to the magnet at firing angle of 60°. rd.E.gil ai (b) The maximum d.c. voltage Vdc,max and maximum current 05. on sonstoub Idc,max which can be supplied from this rectifier, boladi od of bomuz (c) The delay angle a required to give a magnet current of 4A. 0E = 0 signs gunneggin 10.99-olqqin bas zuou FA TI U₂(1) 3-phase 400V vb(1) ve(t) T4 TS d 92nd 997T + T3 R Magnet Vac Load T6Z Fig.3.68. [Ans : Po 1.447 kW, Vdc,max=538V, Idc,max = 10.76A, α = 68.18° ]
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3. Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is C(10). The ratio of the capacitance was measured to be C(O)/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here 4. The depletion region width on the p-side, Tp, was found to be 20% of the entire depletion region width, æp. Find the doping density, Na in the p-side in unit of cm . Answers within 5% error will be considered correct. Enter answer here 5. Find the doping density, Np in n-side unit of cm. Answers within 5% error will be considered correct. Enter answer here
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Plot the currents flowing through ?1 and ?1 as a function of Vin for the circuits of Fig.Assume a constant-voltage diode model and ?? = 2 V.
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For the given circuit find R3 in terms of the other given variables for the condition of VAB = 0 O R3 O R3 O R3 = R3 = O R3 = R₁ O R3 R4 = = R₁ R₂ R4 = R₁ R₁ Vs R₂ R₁ R₂ R4 -Vs R₁ R₁ R₂ O R3 = R₂