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Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is (10). The ratio of the capacitance was measured to be C(0)/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here The depletion region width on the p-side, zp, was found to be 20% of the entire depletion region width, zp. Find the doping density, NA in the p-side in unit of cm-3. Answers within 5% error will be considered correct. Enter answer here Find the doping density, Np in the n-side in unit of cm. Answers within 5% error will be considered correct.

Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is (10). The ratio of the capacitance was measured to be C(0)/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here The depletion region width on the p-side, zp, was found to be 20% of the entire depletion region width, zp. Find the doping density, NA in the p-side in unit of cm-3. Answers within 5% error will be considered correct. Enter answer here Find the doping density, Np in the n-side in unit of cm. Answers within 5% error will be considered correct.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3. Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is (10). The ratio of the capacitance was measured to be C(O/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here 4. The depletion region width on the p-side, zp, was found to be 20% of the entire depletion region width, rD. Find the doping density, NA in the p-side in unit of cm3. Answers within 5% error will be considered correct. Enter answer here 5. Find the doping density, Np in the n-side in unit of cm 3. Answers within 5% error will be considered correct. Enter answer here
Transcribed Image Text:3. Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is (10). The ratio of the capacitance was measured to be C(O/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here 4. The depletion region width on the p-side, zp, was found to be 20% of the entire depletion region width, rD. Find the doping density, NA in the p-side in unit of cm3. Answers within 5% error will be considered correct. Enter answer here 5. Find the doping density, Np in the n-side in unit of cm 3. Answers within 5% error will be considered correct. Enter answer here
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