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- Kindly help with this " material science and engineering " questionPlease help me to understand this question. It's hard and challenging.PROBLEM 2 Two semiconductor materials A and B shown in the given figure, are made by doping germanium crystal with arsenic and indium respectively. The two are joined end connected to a battery as shown in figure. Is the junction forward biased or reverse biased? A B
- (a) Diode is made from n-type and p-type extrinsic semiconductors. Figure Q1(a) shows an example of electrical circuit using diodes. (i) Explain the different in forming n-type and p-type extrinsic semiconductor. (ii) Depletion region is a region between n-region and p-region in diode structure. By using your own word, explain what caused the depletion region to become narrow. (iii) Calculate the value of V, and I, for the circuit in Figure Q1(a). Ge 15V O Si Si 6.6kN Figure Q1(a) : Electric circuit using diode (b) Figure Q1(b) shows a bridge rectifier circuit using germanium diodes. (i) State the rectifier circuit type. (ii) Draw the output waveform, vo for the circuit.1. After the temperature rises, in the pure semiconductor ( ) A. The number of free electrons and holes increases with the same increment B. More holes, same number of free electrons C. Free electrons increase, holes remain unchanged D. The number of free electrons and holes remains unchangedIn a doped semiconductor, Please choose one: a. there are only holes b. there are as many electrons as holes c. no free electrons D. free electrons are generated thermally to. answers B. and D.
- How many valence electrons does a semiconductor has? a. 2 b. 3 c. 6 d. 4 When pure semiconductor is heated, its conductance a. Goes up b. Goes down C. Remains the same d. Can't say When a trivalent impurity is added to a pure semiconductor, it becomes a. A conductor b. An intrinsic semiconductor C. P-type semiconductor d. N-type semiconductori need the answer quicklyQUESTION 1 Provide an example each for a trivalent and pentavalent element. Describe the doping process of Silicon (Si) to obtain p-type and n-type semiconductor material. a) b) c) Explain forward bias and reverse bias conditions of an ideal p-n junction diode. Sketch the I-V characteristic of Si and Ge diode. Discuss why Si based semiconductor is move favored in production of solid state devices.
- Q2- a)What is the relation between number of free electrons and number of holes in an intrinsic semiconductor? b)What is Fermi function?solve all on the keyboard or will dislike if need draw on paper no problem (a) Explain the following terms as they relate to semiconductor diodes: Avalanche effect, Depletion region, and Intrinsic semiconductor (b) With the aid of fully labeled Crystal Lattice Structure diagram (s), explain how P-type material of a semiconductor is formed. (c) Draw a diagram showing the volt-ampere characteristic of a Zener diode. Explain the difference between Zener breakdown and Avalanche breakdown mechanisms. (d) A bridge rectifier is supplied with 120Vrms sinusoidal signal. If each diode has a junction voltage of 0.7V, determine: The peak voltage at the output of the rectifier and A suitable peak inverse voltage rating of each diodeConsider the circuit shown in Figure 2. The cut-in voltage of each diode is . Let and assume both diodes are conducting. Determine if this is a valid assumption and explain your answer. And calculate the values of IR, ID, Ip2, and V.. Rj =1.7 kQ ww VB =1 V D1 Dz R2D 4 kQ Figure 2