Q3VBR₁330523R₂27052Figure 3.18(a) Circuit symbolof the pr junctiondiode; (b) voltage-current character-istic of a silicondiode with I, =10-12 A and n = 1.For negative valuesof up, the diodecurrent is too smallto plot precisely onthe graph.b) is forLDFind a) is for VB = 2 V+UD-2.0c) is and VD ifdiode is reversed.XVDVB = 6 V(a)iDip=-1₁-1.0Reverse-biased region} Use load-line techniqueVB = 6V and theip (mA)201510Given the diodehas the characteristicgiven in the vi plot.Is = 10-1²2 A5Forward-biasedregion1.0Turn-on voltage2.0UD (V)

Answered: Image /qna-images/answer/4a052a08-8739-4319-b2b6-3e34595d9de6.jpg

Q3 VB Find Figure 3.18 (a) Circuit symbol of the pr junction diode; (b) voltage -current character- istic of a silicon R₁ 33052 diode with I, = 10-12 A and n = 1. For negative values of up, the diode current is too small to plot precisely on the graph. 3R₂ 27052 a) iD for VB = 2 V b) is for Up NB = 6 V is and no it -2.0 + diode is reversed. (a) ip=-1₁ VD J -1.0 Reverse-biased region ip (mA) 20 15 10 5 Given the diode has the characteristic given in the vi plot 12 Is = 10-1¹²A Use load-line technique VB = 6V and the I Forward-biased region A 1.0 Turn-on voltage 2.0 UD (V)

Q3 VB Find Figure 3.18 (a) Circuit symbol of the pr junction diode; (b) voltage -current character- istic of a silicon R₁ 33052 diode with I, = 10-12 A and n = 1. For negative values of up, the diode current is too small to plot precisely on the graph. 3R₂ 27052 a) iD for VB = 2 V b) is for Up NB = 6 V is and no it -2.0 + diode is reversed. (a) ip=-1₁ VD J -1.0 Reverse-biased region ip (mA) 20 15 10 5 Given the diode has the characteristic given in the vi plot 12 Is = 10-1¹²A Use load-line technique VB = 6V and the I Forward-biased region A 1.0 Turn-on voltage 2.0 UD (V)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Concept explainers

Photoelectric

The photoelectric effect occurs when light (or similar incident radiation, including X-rays) falls on material together with a metal plate and causes it to emit electrons. The discovery of the photoelectric effect led to important new theories (and to a Nobel Prize for Albert Einstein). Photoelectric cells, or photocells, are utilized in burglar-alarm light detectors and garage-door openers (each employs a through-beam of light this is broken when something movements throughout it), and also to play soundtracks on film movies (in which a light beam shines through the soundtrack encoded at the film and is "read" with the aid of the photocells).

Question

Q3
VB
R₁
33052
3R₂
27052
Figure 3.18
(a) Circuit symbol
of the pr junction
diode; (b) voltage
-current character-
istic of a silicon
diode with I, =
10-12 A and n = 1.
For negative values
of up, the diode
current is too small
to plot precisely on
the graph.
b) is for
LD
Find a) is for VB = 2 V
+
UD
-2.0
c) is and VD if
diode is reversed.
XVD
VB = 6 V
(a)
iD
ip=-1₁
-1.0
Reverse-biased region
} Use load-line technique
VB = 6V and the
ip (mA)
20
15
10
Given the diode
has the characteristic
given in the vi plot.
Is = 10-1²2 A
5
Forward-biased
region
1.0
Turn-on voltage
2.0
UD (V)

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