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For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate he is found to be 50 mV/N at a substrate voltage |Vas=2V, where sensitivity a Ves V, is the threshold voltage of the MOSFET. Assume that, Ves|> 20g, where qdg is the separation between the Fermi energy level E, and the intrinsic level E, in the bulk.

For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate he is found to be 50 mV/N at a substrate voltage |Vas=2V, where sensitivity a Ves V, is the threshold voltage of the MOSFET. Assume that, Ves|> 20g, where qdg is the separation between the Fermi energy level E, and the intrinsic level E, in the bulk.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate av is found to be 50 mV/V at a substrate voltage |Vas|=2V, where al Ves sensitivity V, is the threshold voltage of the MOSFET. Assume that, Ves|>> 20B, where q, is the separation between the Fermi energy level E; and the intrinsic level E, in the bulk. Parameters given are Electron charge (q) = 1.6 x 10 19 c Vacuum permittivity (e) = 8.85 x 10-12 F/m Relative permittivity of silicon (e) Relative permittivity of oxide (e ) = 4 12 %3D The doping concentration of the substrate is (a) 4.37 x 1015 cm 3 (c) 9.37 x 1015 cm-3 (b) 7.37 x 1015 cm 3 (d) 2.37 x 1015 cm3
Transcribed Image Text:For an n-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate av is found to be 50 mV/V at a substrate voltage |Vas|=2V, where al Ves sensitivity V, is the threshold voltage of the MOSFET. Assume that, Ves|>> 20B, where q, is the separation between the Fermi energy level E; and the intrinsic level E, in the bulk. Parameters given are Electron charge (q) = 1.6 x 10 19 c Vacuum permittivity (e) = 8.85 x 10-12 F/m Relative permittivity of silicon (e) Relative permittivity of oxide (e ) = 4 12 %3D The doping concentration of the substrate is (a) 4.37 x 1015 cm 3 (c) 9.37 x 1015 cm-3 (b) 7.37 x 1015 cm 3 (d) 2.37 x 1015 cm3
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