Explain why the free electron model is unable to explain material systems which has an energy gap! Then, what model/theory can explain the system by energy gap?
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Q: For the MOSFET amplifier Shown in figure below, the transistor parameters are VTN 0.8 V. Kn=1 mA/V²,…
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- a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field Effect Transistor with its drain characteristics.https://www.compadre.org/PQP/applications/prob14_4.cfm The potential energy curves are shown (PE given in eV and distance is given in Bohr radii) for two diatomic molecules with the same reduced mass. What part of these curves relates to the moment of inertia and keff? Determine which molecule has the larger moment of inertia and the larger keff.Q#07: The maximum wavelength of light that a certain silicon photocell can detect is 1.11 micrometer (a) what is he energy gap (in eV) between the valence and conduction bands for this photocell (b) Explain why pure silicon is opaque.
- True or false? If false, correct the statement: a. In an p+-n- junction diode (NA >> ND), nearly all depletion is in the n-type region, and the peak electric field at the junction is almost independent of NA. b. The forward current of a p-n junction diode is dominated by the diffusion and recombination of majority carriers. c. In a Schottky barrier diode, there are two types of capacitances, i.e., the depletion capacitance and diffusion capacitance. d. In a Schottky contact, the energy barrier seen by electrons in the metal is always the Schottky barrier height, regardless of the applied bias across the metal and semiconductor. e. Usually the reverse current of a p-n junction diode is more sensitive to temperature as compared to that of a Schottky barrier diode. f. In a MOS structure with p-type semiconductor, if the semiconductor work function is much smaller than the metal work function, the MOS structure will produce an inversion layer after reaching the thermal equilibrium.…Q3 Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1016 cm-3 and donor doping concentrations of 1015 cm 3. Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n; = 1.5 x 1010 cm-3 Eg = 1.035 x 10-12F/cm Your answer5. Please select the correct answer: (a) Acceleration of a free electron and its collision with the host atoms and ionize them in solid, which leads to electron avalanche breakdown. (b) The flow of a substantial current between the electrodes, which appears as a (II) Dielectric strength short between the electrodes when the voltage across a dielectric material exceeds from a critical voltage. (c) The gradual growth of microstructural voids, cracks, or pores within the dielectric due to partial discharge, which leads to electrical tree type of discharge. (d) The maximum field that can be applied to an insulating medium without causing dielectric breakdown. (I) Dielectric breakdown (III) Intrinsic Breakdown (IV) Internal Discharges
- Next nearest neighbor interactions. Consider a monatomic lattice. The potential energy of the crystal system, modeled as a linear chain of atoms is UpE. = 1/(2 a)E„x? where n runs over all the atoms in the chain and x, is the net displacement of the n'th atom. (a) Show that if the atom is interacting with p atoms on either side instead of one (as we discussed in class), the the force acting on the n'th atom is given by, Fn -Eap(un – Un+p); +p where a, represents the force constant between atoms numbered n and n+ p. (b) Let's now consider an atom interacting with four neighboring atoms, two on each side (i.e., p = 2). If a and m have the usual meanings, show that the dispersion relation is given by, 4a sin? (등) (1+ 4 cos? (등)). qa qa w? тPhoton energy of the light with a given wavelength could be calculated by the following equation (attached in this QnA post):*hint: wavelength of light is not in SI unit, unit conversion is needed. What is the band gap of the semiconductor, if it can only be excited by the light with wavelength equal to or smaller than 500 nm?*hint: the photon energy needs to be greater or equal to the band gap, in order to excite the semiconductorSemiconductor Physics /Microelectronics: Why is the voltage drop across a PN junction expressed as V = (1/e0)*x_p*N_a*q*(W/2)? Can you derive it?
- Can you explain why Seebeck coefficient has opposite signs for n and p type semiconductors. What are the materials used in S type thermocouples? How does a thermocouple reader work, why no ice bath is used?What is the band theory in solid-state physics and how does it explain the electrical conductivity of materials?Question Consider a germanium crystal. Calculate the number of the quantum states per cm and the energy levels per cm? in the valence band (VB) and the conduction band (CB). The mass density of the germanium crystal is 5.33 g/cm. i) 3.54x10 quantum states cm in each VB and CB i) 1.77x1023 quantum states cm in each VB and CB i) 8.85x102 quantum states cm in each VB and CB iv) 3.54x103 energy levels cm in each VB and CB v) 1.77x10 energy levels cm in each VB and CB vi) 8.85x10 energy levels cm in each VB and CB Please choose ene Cl, v NOi, iv e Cii, iv 4 Oi, v eONone of the above