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EXERCISE PROBLEM Ex 1.2: (a) Calculate the majority and minority carrier concentrations in silicon at T = 300 K for (i) N₁ = 2 × 10¹6 cm−3 and (ii) Na = 10¹5 cm³. (b) Repeat part (a) for GaAs. (Ans. (a) (i) n = 2 × 10¹6 cm³, Po = 1.125 × 104 cm³; (ii) po = 10¹5 cm³, no = 2.25 × 105 cm³; (b) (i) n = 2 × 1016 cm³, po = 1.62 × 10-4 cm³; (ii) po = 10¹5 cm³, no = 3.24 × 10-3 cm³).

EXERCISE PROBLEM Ex 1.2: (a) Calculate the majority and minority carrier concentrations in silicon at T = 300 K for (i) N₁ = 2 × 10¹6 cm−3 and (ii) Na = 10¹5 cm³. (b) Repeat part (a) for GaAs. (Ans. (a) (i) n = 2 × 10¹6 cm³, Po = 1.125 × 104 cm³; (ii) po = 10¹5 cm³, no = 2.25 × 105 cm³; (b) (i) n = 2 × 1016 cm³, po = 1.62 × 10-4 cm³; (ii) po = 10¹5 cm³, no = 3.24 × 10-3 cm³).

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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EXERCISE PROBLEM Ex 1.2: (a) Calculate the majority and minority carrier concentrations in silicon at T = 300 K for (i) N₁ = 2 × 10¹6 cm−3 and (ii) Na = 10¹5 cm³. (b) Repeat part (a) for GaAs. (Ans. (a) (i) n = 2 × 10¹6 cm³, Po = 1.125 × 104 cm³; (ii) po = 10¹5 cm³, no = 2.25 × 105 cm³; (b) (i) n = 2 × 1016 cm³, po = 1.62 × 10-4 cm³; (ii) po = 10¹5 cm³, no = 3.24 × 10-3 cm³).
Transcribed Image Text:EXERCISE PROBLEM Ex 1.2: (a) Calculate the majority and minority carrier concentrations in silicon at T = 300 K for (i) N₁ = 2 × 10¹6 cm−3 and (ii) Na = 10¹5 cm³. (b) Repeat part (a) for GaAs. (Ans. (a) (i) n = 2 × 10¹6 cm³, Po = 1.125 × 104 cm³; (ii) po = 10¹5 cm³, no = 2.25 × 105 cm³; (b) (i) n = 2 × 1016 cm³, po = 1.62 × 10-4 cm³; (ii) po = 10¹5 cm³, no = 3.24 × 10-3 cm³).
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