(E-1.7) x 1000 R LED
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What is the value of the resistor in the electronics curciut using an LED diode? The current is 20 mA and th epower supply voltage (E) is 9V.
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- Answer The following problem. Base on the given Table. Show complete solutions. View ImageThe circle is below(for D1-1N4148 is 1N4148 Diode). and also there have a table(. Note that the first 3 rows of measurement are obtained when the diode is reverse-biased) Vout_dc (V) VD (V) ID (μA) 0.51 -0.51 0.0 0.23 -0.20 0.0 0.10 -0.08 0.0 0.00 0.00 0.0 0.05 0.04 0.0 0.11 0.09 0.0 0.17 0.15 0.1 0.19 0.20 0.1 0.27 0.25 0.4 0.32 0.30 1.6 0.36 0.34 3.1 0.42 0.40 8.2 0.46 0.42 14.3 0.52 0.47 28.0 Questions: 1) plot the diode’s I-V characteristics on a linear scale (ID on the y-axis and VD on the x-axis) 2) [RP4] 3) [RP5]so then how is Rth 0.8695 kOhms in the original explanation?
- Could some please provide an explanation for VL why 15 and 1.33Please help. You are going to draw arrows that indicates the flow of the given 5 actions (a,b,c,d,e). You can draw arrows for all of them in the picture above, or make separate drawing for each letter. Please help me this is about CARRIER ACTION/FLOW OF CARRIERS in a semiconductor. It is also about Ferni Level.Explain the relationship between M18 and M19?
- or bele inches, set 1.1X=66 and solve for x to get their oric 14. At some point in the season, the Trailblazers had won 60% of their basketball games. Afterh that point, they won 8 more games and lost 2, to finish the season having won 65% of their games. How many games did the Trailblazers play during the season? Since Tu twice thPROBLEM 01 – 0003: The intrinsic carrier concentration for Si is approximately 1010 carriers/cm3. (a) If an impurity concentration of 1014 donor atoms/cm3 is added, determine the carrier concentrations.(A) Draw the x-x' cross section.
- Graph: Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph sheet. Now mark +ve X-axis as Vf, -ve X-axis as Vr, +ve Y-axis as Ifand –ve Y-axis as Ir. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si reverse biased condition in third Quadrant.Mask design. Silicon solar cell is made of Al thin-film electrodes on silicon using lift-off technology. The linewidth of Al electrode is 10 μµm and the spacing between the adjacent electrodes is 30 µm, diameter of the ring is 500 µm. There are two contact areas, 100 x 100 µm at the end of each electrode. Draw a mask, mark down the dimensions, and clearly indicate the tone (clear or opaque) of each region on the mask. Contact Aluminum thin film electrode Silicon