Drain characteristics of a FET device is given as in the Figure-1; a) Define the type of the possible FET device having this characteristics, calculate and sketch the transfer characteristics by by using Shockley's equation and the characteristic curves given in Figure-1. Which values can be possible for cut-off Ve and saturation Vextracted GS DS from the drain characteristics.
Drain characteristics of a FET device is given as in the Figure-1; a) Define the type of the possible FET device having this characteristics, calculate and sketch the transfer characteristics by by using Shockley's equation and the characteristic curves given in Figure-1. Which values can be possible for cut-off Ve and saturation Vextracted GS DS from the drain characteristics.
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Please answer the question step by step and please care to explain the question in detailed with your own sentence and explain why you used that formula, calculations etc asap. Thanks in advance.
![Drain characteristics of a FET device is given as in the Figure-1;
a) Define the type of the possible FET device having this characteristics, calculate and sketch
the transfer characteristics by by using Shockley's equation and the characteristic curves
given in Figure-1. Which values can be possible for cut-off Ve and saturation V extracted
GS
DS
from the drain characteristics.
b) Design and plot a proper fixed biasing circuit from your calculations above and use the
required DC values obtained from the network output of Q.1. Explain the tasks of all the
components used in the design.
c) Calculate all the required peripheral components values in your design by taking account
the saturation level of VDs at VGs=+6 V and and choosing operating region values in drain
characteristic curves. Calculate and plot a loadline for the current network, find Q point and
point out In and V
values close to Q point.
GSQ
DQ
o (mA)
o (mA)
Vas +9 V
10
10
9.
8.
Vasa+7V
7
7.
Vas+6 V
Vasa+5 V
Vasond V
Vas+3 V
Vas 2V
2.
4
5
7.
8 9 Ves
10
15
20
25
Vas (V)
(а)
(b)
Figure-1
2.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F0b03f71c-0170-478a-901f-ff19cf932e15%2F42c3703c-5487-4c50-b8a3-f95c8aa603db%2Fipyqiup_processed.png&w=3840&q=75)
Transcribed Image Text:Drain characteristics of a FET device is given as in the Figure-1;
a) Define the type of the possible FET device having this characteristics, calculate and sketch
the transfer characteristics by by using Shockley's equation and the characteristic curves
given in Figure-1. Which values can be possible for cut-off Ve and saturation V extracted
GS
DS
from the drain characteristics.
b) Design and plot a proper fixed biasing circuit from your calculations above and use the
required DC values obtained from the network output of Q.1. Explain the tasks of all the
components used in the design.
c) Calculate all the required peripheral components values in your design by taking account
the saturation level of VDs at VGs=+6 V and and choosing operating region values in drain
characteristic curves. Calculate and plot a loadline for the current network, find Q point and
point out In and V
values close to Q point.
GSQ
DQ
o (mA)
o (mA)
Vas +9 V
10
10
9.
8.
Vasa+7V
7
7.
Vas+6 V
Vasa+5 V
Vasond V
Vas+3 V
Vas 2V
2.
4
5
7.
8 9 Ves
10
15
20
25
Vas (V)
(а)
(b)
Figure-1
2.
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