Differentiate between Meissner Effect and Josephson Effect of Superconductivity…………

Q: Can superconductors be used in daily life working? Explain in your own words with the help of…

A: Answer: Certain metals and alloys exhibit zero resistivity almost infinite conductivity. When they…

Q: Is it reasonable to expect superconductivity in a "glass," a material with almost no crystalline…

A: Introduction: This question discusses why a material with little or no crystal structure is…

Q: As the forward current through a silicon diode increases, the voltage across the diode

A: We’ll answer the first question since the exact one wasn’t specified. Please submit a new question…

Q: Advanced Physics As it turns out, the B-52 was carrying a Pegasus launch vehicle. The Pegasus starts…

A: Given Data The specific impulse of the rocket is:ISP=220s The initial velocity is:v=500 mph=223.52…

Q: An intrinsic Si semiconductor sample has a length of L =100 um, at 300 K the sample is optically…

A: Given: Sample length=100 μm N=1020 cm-3 T=1 μs voltage applied=10 v

Q: Consider a uniformly doped abrupt pn junction with n-10° cm' at 300 K, E,= 1.0eV and the doping…

A: The built in barrier potential for abrupt junction is given by, ϕp=kTqNAniϕn=kTqNDni     For p-side…

Q: 2. In n-channel n"-polycrystalline Si-SiO2-Si MOS transistor N, = 2 x 1016 cm, Qavq = 2 x 10!! em?,…

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Q: 1. Find V1 and V2 in the circuit. 4 ohm R1 V1 VS1+ 10 V 8 V tvs2 2 ohm R2 V2

A: Given to find V1 and V2 in the circuit using KCL and LVL laws. KCL : The sum of all currents that…

Q: For the NMOS amplifier in figure, replace the transistor with its T equivalent circ no channel…

A: In voltage gain, the output voltage is divided by the input voltage, while in current gain, the…

Q: The forward applied bias voltage on the pn junction cannot be ... the built- in potential barrier.?

A: The forward applied bias voltage on the pn junction cannot be less than the built-in potential…

Q: A power transistor is a -2 .device a) two terminal, bipolar, voltage controlled b) two terminal,…

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Q: A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow…

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Q: 10-5. Consider the power series x2 z=x+ 2! x3 + 3! ... nvert this to find x as a power series in z.…

A: Given: The power series is x+x22!+x33!+.... Introduction: A power series (in one variable) is an…

Q: Tunnel Diode device is a. none of the options b. Basic p-n junction but with both materials very…

A: Tunnel diode device is?

Q: na semicô lectrons and 20% by holes. If the drift speed of the electrons is three times nat of the…

A: Vd = n e A vd

Q: Explain how a double heterostructure laser has both carrier confinement and optical confinement and…

A: In a homogeneous laser, the p-n junction acts as a means to achieve population inversion. The 'p'…

Q: Semiconductor LED's have a slow response time and hence a low frequency operation and low band width…

A: Light emitting diodes (LEDs) are lightly doped diodes.

Q: Q) Calculate the transistor’s Emitter current if it is driven by a small Base current of 7mA with a…

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Q: In Metal (Conductor) there is no(………

A: We already know that a Conductor material contain free charges and these free charges can move…

Q: For a certain semiconductor ,= 1500 cm/V-sec, 4,= 1200 cm/V-sec, m, = 1.3 x 10-28 g and m, = 6.8 x…

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Q: For a transistor, the current amplification factor is 0.8. The transistor is connected in common…

A: Given value--- current amplification factor = 0.8 . change in base current = 6 mA. We have to…

Q: temperature. (a) If the concentration of holes is 2.4 x 1015 cm-3, determine the electron concentra-…

A: Given:-  Consider a germanium semiconductor at room temperature. a) If the concentration of holes is…

Q: A silicon layer measuring 1 micrometers thick contains an electron. if a 1D quantum well with…

A: The thickness L =1 micrometers =1×10-6 m. Mass m = 0.26×rest mass of electron Plank constant (h) =…

Q: Ex: find the relaxation timet for electron if the mobility of

A: Mobility of electron, μ = 1400 cm2/V.s = 1400 × 10-4 m2/V.sμ = 14 × 10-2 m2/V.sMass of an electon,…

Q: 2. The transistor illustrated below has an oxide (&=4ɛ) thickness d = 1.2nm and channel depth L₂ =…

A: "A transistor "is defined as a three-terminal semiconductor device that can be used to amplify or…

Q: What should be the bias polarities to be applied in the Emitter-Base junction and Collector-Base…

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Q: The hall effect is much greater in semiconductor than in metal. Why? What practical results can we…

A: To determine the hall effect is much greater than semiconductors than in metal

Q: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2…

A: given, v=0.54 v v(t)=0.02585 v Junction area=100μm2=100×10-8cm2Acceptor concentration…

Q: For the given circuit, the power across zener diode is ............ mW. 1 ΚΩ wwwww

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Q: 1) The energy band in which free electrons exist is band. 2) The electron energy (E) in the fifth…

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Q: If the 3 dB frequency of the short-circuit current gain of a BJT transistor is 100MHZ, then* Given:…

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Electroplating Process

The process by which a metal is layered with some other metal by utilizing the process of hydrolysis is known as electroplating. The main purpose of the electroplating process is to provide a coating to prevent the corrosion of the metal. The electroplating is done by the process of oxidation. The electroplating like in case of chromium, a chromium layer is formed on the surface of other metal to protect or to decorate the metals. The electroplating is done in a container or apparatus in which the liquid solution is present known as brine along with the electrodes and clips to complete the process. To do the electroplating the current is passed through this solution.