Differentiate between Meissner Effect and Josephson Effect of Superconductivity…………

Q: +15 V 2) Consider the common-emitter amplifier (in this case, a "grounded-emitter amplifier," since…

A: Given values, β=100Vcc=15 VRE=0RC=2 kΩRB=20 kΩVBE=0.6 V

Q: As the forward current through a silicon diode increases, the voltage across the diode

A: We’ll answer the first question since the exact one wasn’t specified. Please submit a new question…

Q: Advanced Physics As it turns out, the B-52 was carrying a Pegasus launch vehicle. The Pegasus starts…

A: Given Data The specific impulse of the rocket is:ISP=220s The initial velocity is:v=500 mph=223.52…

Q: A. Fixed Base Biasing a Transistor: 1. Construct the circuit using a resistor, Rc = 470 2 and a…

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Q: An intrinsic Si semiconductor sample has a length of L =100 um, at 300 K the sample is optically…

A: Given: Sample length=100 μm N=1020 cm-3 T=1 μs voltage applied=10 v

Q: A p-n-p transistor is used in common emitter mode in an amplifier circuit. A charge of 40 µA in the…

A: In this question we have to find the base current amplification factor. Please give positive…

Q: Consider a uniformly doped abrupt pn junction with n-10° cm' at 300 K, E,= 1.0eV and the doping…

A: The built in barrier potential for abrupt junction is given by, ϕp=kTqNAniϕn=kTqNDni     For p-side…

Q: A transistor is connected in common base mode and amplification factor is 0.98 and leakage current…

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Q: 2. In n-channel n"-polycrystalline Si-SiO2-Si MOS transistor N, = 2 x 1016 cm, Qavq = 2 x 10!! em?,…

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Q: current, and B1 = B2 = 50, Let Vcc = 12 V, RE =1 kQ, and Ry→0. + Vcc The Si Darlington transistor…

A: Given:

Q: For the NMOS amplifier in figure, replace the transistor with its T equivalent circ no channel…

A: In voltage gain, the output voltage is divided by the input voltage, while in current gain, the…

Q: The forward applied bias voltage on the pn junction cannot be ... the built- in potential barrier.?

A: The forward applied bias voltage on the pn junction cannot be less than the built-in potential…

Q: A power transistor is a -2 .device a) two terminal, bipolar, voltage controlled b) two terminal,…

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Q: A transistor with a = 0.98 is operated as an amplifier in a common base circuit with a load…

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Q: 10-5. Consider the power series x2 z=x+ 2! x3 + 3! ... nvert this to find x as a power series in z.…

A: Given: The power series is x+x22!+x33!+.... Introduction: A power series (in one variable) is an…

Q: Consider the BJT circuit in Figure 6. Assume that the following values remain constant during the…

A: Given: The impedance value of the transistor is B = 100 The base-emitter voltage is VBE = 0.65 V The…

Q: na semicô lectrons and 20% by holes. If the drift speed of the electrons is three times nat of the…

A: Vd = n e A vd

Q: d) A difference amplifier circuit is shown in Figure 4.1. What is the role of the transistor T3 in…

A: Given: Let us consider the given difference amplifier circuit, The above figure, the use of a…

Q: Explain how a double heterostructure laser has both carrier confinement and optical confinement and…

A: In a homogeneous laser, the p-n junction acts as a means to achieve population inversion. The 'p'…

Q: b. The forbidden band is 0.7 eV in Ge and 1.1 eV in Si. How the conductivity of Ge does varies…

A: The problem is based on the concept of conductivity.  Conductivity is a measure of a material's…

Q: Semiconductor LED's have a slow response time and hence a low frequency operation and low band width…

A: Light emitting diodes (LEDs) are lightly doped diodes.

Q: Q) Calculate the transistor’s Emitter current if it is driven by a small Base current of 7mA with a…

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Q: In Metal (Conductor) there is no(………

A: We already know that a Conductor material contain free charges and these free charges can move…

Q: For a certain semiconductor ,= 1500 cm/V-sec, 4,= 1200 cm/V-sec, m, = 1.3 x 10-28 g and m, = 6.8 x…

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Q: Q. 2. In a P-N junction diode, width of depletion layer is 0 · 5µm and potential barrier is 0-5V.…

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Q: For a transistor, the current amplification factor is 0.8. The transistor is connected in common…

A: Given value--- current amplification factor = 0.8 . change in base current = 6 mA. We have to…

Q: temperature. (a) If the concentration of holes is 2.4 x 1015 cm-3, determine the electron concentra-…

A: Given:-  Consider a germanium semiconductor at room temperature. a) If the concentration of holes is…

Q: Kirchhoff’s Current Law KCL is a restatement of………………………………………………..…….. & Kirchhoff’s Voltage Law…

A: SOlution: KVL and KCL laws for the closed circuit.

Q: Ex: find the relaxation timet for electron if the mobility of

A: Mobility of electron, μ = 1400 cm2/V.s = 1400 × 10-4 m2/V.sμ = 14 × 10-2 m2/V.sMass of an electon,…

Q: What should be the bias polarities to be applied in the Emitter-Base junction and Collector-Base…

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Q: 5cm T=300K and VT = kT/q= 0.026V. %3D 1cm An alien named Iofi sneezes onto the wafer, doping it…

A: Given, NA=103/cm3

Q: The hall effect is much greater in semiconductor than in metal. Why? What practical results can we…

A: To determine the hall effect is much greater than semiconductors than in metal

Q: In a transistor if a = 100 and emitter current is 10mA, then Ic is A. 100 mA В. 10mA C. 100.1 mA D.…

A: Given Data : The emitted current for the transistor is given as Ie=10mA The alpha factor for the…

Q: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2…

A: given, v=0.54 v v(t)=0.02585 v Junction area=100μm2=100×10-8cm2Acceptor concentration…

Q: For the given circuit, the power across zener diode is ............ mW. 1 ΚΩ wwwww

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Q: 1) The energy band in which free electrons exist is band. 2) The electron energy (E) in the fifth…

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Electroplating Process

The process by which a metal is layered with some other metal by utilizing the process of hydrolysis is known as electroplating. The main purpose of the electroplating process is to provide a coating to prevent the corrosion of the metal. The electroplating is done by the process of oxidation. The electroplating like in case of chromium, a chromium layer is formed on the surface of other metal to protect or to decorate the metals. The electroplating is done in a container or apparatus in which the liquid solution is present known as brine along with the electrodes and clips to complete the process. To do the electroplating the current is passed through this solution.