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Diferencie entre semiconductores extrínsecos de tipo n y semiconductores extrínsecos de tipo p.
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- The band gap for the elemental semiconductor silicon is 1.11 eV. That energy corresponds to what wavelength and region of the electromagnetic spectrum? (1eV = 1.602 x 10-19J) Group of answer choices 1117 nm; Infrared 1117 nm; Ultra-violet 1.117 x 10E(-6) nm; Infrared 1.778 x 10E(-19) J; Ultra-violetWrite the theory, state, and explain two properties and two applications on each topic you select. Choose any three topics out of total six topics indicated below. Superconductors; Semiconductors; Materials and devices for energy generation and storage; Membranes; Biomedical materials; Miniaturization in materials science.The first LEDs were made from GaAs, which has a bandgap of 1.43 eV. What wavelength of light would be emittedfrom an LED made from GaAs? What region of theelectromagnetic spectrum does this light correspond to: ultraviolet,visible, or infrared?
- The equilibrium density of vacancies ns is given by Nexp(-Es/kT) , where N is the density of semiconductor atoms and Es is the energy of formation. Calculate ns in silicon at 27° C, 900 ° C, and 1200° C. Assume Es = 2.3 eV.The semiconductor CdSe has a band gap of 1.74 eV. Whatwavelength of light would be emitted from an LED madefrom CdSe? What region of the electromagnetic spectrum isthis?Sketch the band structure of a Li AND a Si crystal. (ii) How would you expect the electrical conductivity in Li AND Si crystals to vary with temperature? (iii) Account for the fact that the conductivity of Si is enhanced by the addition of small amounts of B.
- The band gap for the elemental semiconductor silicon is 1.11 eV. That energy corresponds to what wavelength and region of the electromagnetic spectrum? (1eV = 1.602 x 10-19J; 1 nm = 1 x 10-9) 1.778 x 10E(-19) J; Ultra-violet 1117 nm; Ultra-violet 1.117 x 10E(-6) nm; Infrared 1117 nm; InfraredDetermine the crystal structure for the following: (a) a metal with a0 = 4.9489 Å, r = 1.75 Å and one atom per lattice point; and (b) a metal with a0 = 0.42906 nm, r = 0.1858 nm and one atom per lattice point.What are the differences between (properties wise) graphite, graphene, carbon nanotubes, and graphene oxide (similarities and differences) what are the advantages of using one form over another.
- 4. Classify the following as n- or p-doped semiconductors: a) Ga doped Ge b) As doped Si c) Ino.49 AS0.51.Direct bandgap semiconductor materials generally support radiative (optoelectronic) transitions better compared to indirect bandgap semiconductor materials. Why?Which of the following doped semiconductors will be p-type and which will be n-type (i)Arsenic in germanium (ii) Germanium in Silicon (ii) Indium in Germanium(iv) Silicon on antimony sites in Indium antimonide (InSb).(v) Magnesium on Gallium sites in gallium nitride(GaN).
