D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit toestablish a de emitter current of 1 mA and provide the highest possible voltage gain while allowingfor a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies.R₂4+VccRE-VEEFigure 7.53 Biasing the BJT using two power supplies. Resistor R isneeded only if the signal is to be capacitively coupled to the base. Otherwise,the base can be connected directly to ground, or to a grounded signal source,resulting in almost total 8-independence of the bias current.

Given: IE=1 mAVC=±2 VVIN=10 V, -5 V Find: Design the circuit to obtain an emitter current of IE=1 mA…

D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowi for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. Ra +1 +Vcc Rc RE Figure 7.53 Biasing the BJT using two power supplies. Resistor R, is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source,

D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowi for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. Ra +1 +Vcc Rc RE Figure 7.53 Biasing the BJT using two power supplies. Resistor R, is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source,

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Concept explainers

BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.

Question

D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to
establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowing
for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies.
R₂4
+Vcc
RE
-VEE
Figure 7.53 Biasing the BJT using two power supplies. Resistor R is
needed only if the signal is to be capacitively coupled to the base. Otherwise,
the base can be connected directly to ground, or to a grounded signal source,
resulting in almost total 8-independence of the bias current.

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